• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.236-237
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• 2012

ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.478-482
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• 1995

The iron-based Metglas 2605S3A amorphous alloy ribbons are annealed at $435^{\circ}C$ for various periods from 5 to 210 min, and the effect of annealing is investigated on the dc magnetic properties of the ribbon. Typical square-type hysteresis loops are observed for the ribbons annealed fo 5 min, indicative of the nearly complete removal of residual stresses which are produced during melt-quenching. As the annealing time increases, the coercivity increases and the shape of hysteresis loops transforms to round type and finally to sheared one at the longest annealing time of 210 min. These results may be explained by the formation of clusters with chemical shortorder and very fine crystallites (at the annealing time of 210 min), and the diffusion-induced stresses during the formation of the clusters. For the samples annealed for 5 min, very good dc properties of the squareness ratio, coercivity and maximum permeability are observed, but, rather unexpectedly, the initial permeability is found to be very low. These results are considered to be due to a simple domain structure consisting of very small number of $^{\circ}$ domains.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.22-26
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• 2001

ITO (Indium-tin-oxide) thin films were deposited on glass substrates by a dc magnetron sputtering system using ITO powder target. The methods of heat treatment are important factor to obtain high quality ITO films with low electrical resistivity and good optical transmittance. Therefore, both methods of the substrate temperature and post-deposition annealing temperature have been compared on the film structural, electrical and optical properties. A preferred orientations shifts from (411) to (222) peak at annealing temperature of 200$\^{C}$. Minimum resistivity of ITO film is approximately 8.7$\times$10$\^$-4/ Ωcm at substrate temperature of 450$\^{C}$. Optical transmittances at post annealing temperature above 200$\^{C}$ are 90%. As a result, the minimum value of annealing temperature that is required for the recrystallization of as-deposited ITo thin films is 200$\^{C}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.1-8
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• 2008

Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.5
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• pp.536-541
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• 2015

Copper has been used extensively as an electric wire or as a base material in various types of machineries owing to its good electrical and thermal conductivity and good fabricating property, as well as its good corrosion resistance compared to iron. Furthermore, the copper-nickel alloy has significant corrosion resistance in severely corrosive environments. Although, cupro-nickel alloy shows better corrosion resistance than the brass and bronze series, this alloy also corroded in severely corrosive environments, including aggressive chloride ions, dissolved oxygen, and condition of fast flowing seawater. In this study, and annealing treatment at various annealing temperatures was carried out on the cupro-nickel (Cu-10%Ni) alloy, and the effects of annealing were investigated using electrochemical methods, such as measuring the polarization and impedance behaviors under flowing seawater conditions. The corrosion resistance increased by annealing compared to non heat treatment in the absence of flowing seawater. In particular, the sample annealed at $200^{\circ}C$ exhibited the best corrosion resistance. The impedance in the presence of flowing seawater showed higher values than in the absence of flowing seawater. Furthermore, the highest impedances was observed in the sample annealed at $800^{\circ}C$, irrespective of the present of flowing seawater. Consequently, the corrosion resistance of cupro-nickel (Cu-10%Ni) alloy in a severely corrosive environment can be improved somewhat by annealing.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.6
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.305-313
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• 2013

In this study, we investigated effects of thermal annealing on the thermal properties and microphase separation behaviors of glycidyl azide-based thermoplastic polyurethane elastomers (ETPE). The GAP-based ETPEs were characterized by attenuated total reflectance-fourier transform infrared spectroscopy (ATR-FTIR), differential scanning calorimeter (DSC), dynamic mechanical analysis (DMA), and gel permeation chromatography (GPC). The effects of annealing temperature conditions ($80{\sim}130^{\circ}C$, 1 h or 24 h) on the properties of the ETPEs were investigated. The intensity of azide group absorption peak of ATR-FTIR spectra and the solubility of ETPE for methylene chloride and dimethylformamide solvent decreased after the annealing at $130^{\circ}C$ for 1 h and at $105^{\circ}C$ for 24 h. With increasing the annealing temperature from $80^{\circ}C$ to $110^{\circ}C$, the high temperature rubbery plateau region of storage modulus curves from DMA thermogram for GAP-based ETPEs was extended to the higher temperature.