• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1873-1876
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• 2003

Magneto-rheological polishing is a new technology used in precision polishing. It utilizes magneto-rheological fluid. nonmagnetic polishing abrasive, aqueous carrier fluids in magnetic field to remove material from a part surface. Silicon micro channel as work piece is fixed in the slurry which is made of MR fluid and CeO$_2$(10 vol%) abrasive particles. And permanent magnet rotate in the slurry to transfers magnetic force to abrasive particles by increasing yield strength of MR fluid. so, the obtained bottom surface roughness of micro channel by experiment reduced to Ra 0.010 $\mu\textrm{m}$ Rmax 0.103 $\mu\textrm{m}$ and finwall surface roughness of micro channel reduced to Ra 0.018 $\mu\textrm{m}$ Rmax 0.468 $\mu\textrm{m}$. At optimum conditions of variables, the workpiece as silicon micro channel have about 24 times smaller surface roughness than before polishing.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.225-228
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• 2007

마이크로 고체 추진제 추력기는 현재의 MEMS 기술로 가장 실현 가능성이 높은 마이크로 추력기이다. 마이크로 고체 추진제 추력기의 기본 요소로는 마이크로 노즐, 마이크로 점화기, 연소 챔버 그리고 고체 추진제이다. 마이크로 노즐과 연소 챔버는 감광유리의 이방성 식각을 통해 제작이 되었다. 마이크로 점화기는 마이크로 유리 박막 백금 히터를 사용하였다. 요소들의 제작 공정을 확립 후, 요소들을 통합하여 추력기를 개발하였다. 추력기의 연소 실험을 수행하여 성공적으로 연소가 일어남을 확인하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.190-193
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• 1991

The monolithically integrated receiver OEIC using InGaAs/InP PIN PD, junction FET's and bias resistor has been fabricated on semi-insulating InP substrate. The fabrication process is highly compatible between PD and self-aligned JFET, and reduction in gate length is achieved using an anisotropic selective etching and a non-planar OMVPE process. The PIN photodetector with a 80 ${\mu}{\textrm}{m}$ diameter exhibits current of less than 5 nA and a capacitance of about 0.35 pF at -5 V bias voltage. An extrinsic transconductance and a gate-source capacitance of the JFET with 4 ${\mu}{\textrm}{m}$ gate length (gate width = 150 ${\mu}{\textrm}{m}$) are typically 45 mS/mm and 0.67 pF at 0 V, respectively. A voltage gain of the pre-amplifier is 5.5.

• Journal of Korean Vacuum Science & Technology
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• 제7권1호
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• pp.23-26
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• 2003

In this study, a neutral beam was formed using a low angle forward reflection of the ion beam and its degree of neutralization at different reflection angles was investigated. When the ion beam was reflected by a reflector at the angles lower than 15$^{\circ}$, most of the ions reflected were neutralized and the lower reflector angle showed the higher degree of neutralization. Photoresist(PR) and SiO$_2$ etchings were carried out with the neutralized oxygen and fluorine radical fluxes, respectively, and highly anisotropic etch profiles could be obtained suggesting the formation of highly directional neutral flux.

• 전자공학회논문지A
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• 제31A권4호
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• 대한전자공학회논문지
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• 제21권1호
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• pp.45-50
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• 1984

결정면이 (100)인 실리콘 웨이퍼 위에 열확산(thermal diffusion)법을 이용하여 표면에 V형 흠이 형성된 N+P 태양전지를 제작하였다. (100) 실리콘 표면에 V형 홈을 형성시키기 위하여 이방성 부식용액으로는 etylendiamine, water, pyrocathecol 혼합용액을 사용하였다. 100mW/㎠의 조명아래에서 V형홈을 형성시킨 태양전지가 효율면에서 일반 평면 N+P 태양전지보다는 2.5∼3.5%, texturized 태양전지보다는 0.4∼0.6%정도의 증가를 보였다.

• 대한기계학회논문집A
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• 제33권3호
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• pp.237-242
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• 2009

MEMS catalytic combustors were fabricated to use in micro-power sources as a heat source. The combustor was fabricated by photolithography and anisotropic wet etching of photosensitive glass wafers. Two different catalyst loading methods were used to complete the fabrication of the combustors. For thin film type, the $Al_2O_3$ was washcoated on the surface of the combustion chamber as a catalyst support, and for packed-bed type, ceramic foam was inserted after Pt was coated. The volume of the combustors was 1.8 $cm^3$ and 16W of heat was generated using the fabricated combustors with hydrogen. The energy density of combustor was about 8.9 W/$cm^3$.

• 한국산학기술학회논문지
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• 제6권1호
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• pp.24-28
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• 2005

3차원 실리콘 챔버를 갖는 $15.8{\times}15.8 mm^2$크기의 칩을 바이오 센서용으로 마이크로머시닝 기술을 이용하여 개발하였다. 비등방성 식각기술을 이용하여 (100)방향의 p형 실리콘 웨이퍼위에 마이크로 챔버를 형성하였다. 마이크로 챔버를 갖는 웨이퍼와 백금전극이 도포된 Pyrex 유리를 DGF-48S 접착제를 이용하여 접합하였다. 백금전극과 Ag/AgCl 기준전극에 의한 전기화학적 특성을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.768-773
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• 2005

We present an overview of our new method of liquid crystal (LC) alignment based on the anisotropic etching of the alignment layers with a directed plasma flux. The method is realized by the use of anode layer source of "race track" geometry generating two "sheets" of accelerated plasma. These sheets are directed obliquely to the treated substrates. The static and dynamic irradiation regimes have been explored. The optimized processing conditions and materials are discussed. The technique yields an excellent uniformity of liquid crystal alignment of planar, tilted and vertical types. It is shown that the new method can be easily adapted for the alignment treatment of large area substrates used in the modern LCD manufacturing process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.141-143
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• 1994

In this paper, an electrostatic micro-actuator is fabricated using flat p+ diaphragm. To avoid the buckling of the flat p+ diaphragm, the processes are designed appropriately. The fabrication processes of the actuator are the anisotropic etching with EPW, the boron diffusion process, Al deposition and the silicon to glass bonding using the negative photoresist. The distance between the p+ and Al electrodes is $10{\mu}m$, and the thickness of the p+ diaphragm is $2{\mu}m$. The measurement of the characteristic of the actuator is performed at 50V. The center displacement of the diaphragm is $1.5{\mu}m$ at 10Hz. In comparison with the experimental data of the actuator with corrugated diaphragm, it is confirmed that the actuator with flat diaphragm is more effective than that with corrugated one in the small deflection region.