Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 1991.06a
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- Pages.190-193
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- 1991
Fabrication and Characteristics of Long Wavelength Receiver OEIC
장파장 OEIC의 제작 및 특성
Abstract
The monolithically integrated receiver OEIC using InGaAs/InP PIN PD, junction FET's and bias resistor has been fabricated on semi-insulating InP substrate. The fabrication process is highly compatible between PD and self-aligned JFET, and reduction in gate length is achieved using an anisotropic selective etching and a non-planar OMVPE process. The PIN photodetector with a 80
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