• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.841-843
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• 2008

We elucidated a way to increase the mobility of $\pi$-stacked materials by comparing various single-crystal OFETs. A high field-effect mobility (of $3.7\;cm^2/Vs$) was obtained by increasing the effective $\pi$-stacking area and decreasing the $\pi$-stacking distance.

• Journal of Information Technology Applications and Management
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• v.29 no.6
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• pp.95-122
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• 2022

The rapid development of technology, the spread of information, and the implementation of the government's start-up support policy exponentially increase the number of start-up companies. The purpose of this study is to investigate each company's cultural capital's effect on organization performance by promoting knowledge management activities and forming organization habitus based on Cultural Reproduction Theory and Cultural Mobility Theory. As a result of the study, it confirmed that the relationship between cultural capital, knowledge management activities, habitus, and organization performance was significant. The results of this study have academic implications as follows: First, the field of research has expanded by studying the effects of cultural capital on business administration, which is less active than existing education and sociology. Second, it accepts and supports Cultural Reproduction Theory and Cultural Mobility Theory from different perspectives.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.276-279
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• 2008

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.664-666
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• 2008

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.878-884
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• 1991

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.368-368
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• 2012

We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.69.3-69.3
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• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.123-123
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.2-391.2
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• 2014

Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices