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Study on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistor using Hydrogen Plasma Treatment

수소 플라즈마 처리를 이용한 역스테거드형 펜타센 트랜지스터의 전기적 특성 향상에 대한 연구

  • 장재원 ;
  • 이주원 (한국과학기술연구원 마이크로 시스템연구센터) ;
  • 김재경 (광전자재료연구센터) ;
  • 김영철 (광전자재료연구센터) ;
  • 주병권 (한국과학기술연구원 마이크로 시스템연구센터)
  • Published : 2003.11.01

Abstract

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

Keywords

References

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