Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.391.2-391.2
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- 2014
Solution-processible Inorganic-organic Hybrid Bipolar Field Effect Transistors
- Chae, Gil Jo (Department of material physics, Donga-A University) ;
- Walker, Bright (Department of Interdisciplinary Green Energy, Ulsan National Institute of science and Technology) ;
- Kim, Kang Dae (Department of Physics and Energy harvest storage research center (EHSRC), University of Ulsan) ;
- Cho, Shinuk (Department of Physics and Energy harvest storage research center (EHSRC), University of Ulsan) ;
- Seo, Jung Hwa (Department of material physics, Donga-A University)
- Published : 2014.02.10
Abstract
Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at