• Korean Chemical Engineering Research
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• 제49권5호
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• pp.548-553
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• 2011

Isophorone diisocyanate(IPDI), polycarbonate diol(PCD), dimethylol propionic acid(DMPA)를 출발물질로 하여 NCO terminated prepolymer가 합성되었다. 이 prepolymer의 NCO기를 아크릴 단량체로 capping하기 위해 다양한 아크릴 단량체인 2-hydroxyethyl methacrylate(HEMA), 2-hydroxyethyl acrylate(HEA), pentaerythritol triacrylate(PETA)가 첨가되었다. 제조된 용액의 평균 입경은 아크릴 단량체가 첨가되면서 증가하였다. 또한 제조된 코팅 막의 연필경도 및 내마모성은 순수한 수분산 폴리우레탄보다 우수하였으며, 아크릴 단량체 중에서 PETA가 가장 우수한 물성을 보였다.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.191-197
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• 2012

Isophorone diisocyanate(IPDI), polycarbonate diol(PCD), dimethylol propionic acid(DMPA)를 출발물질로 하여 제조된 폴리우레탄 prepolymer의 미반응 NCO기를 아크릴 단량체인 pentaerythritol triacrylate(PETA)로 capping시켜 acrylic terminated polyurethane prepolymer를 합성하였다. 그 후 이 prepolymer의 잔여 NCO기를 실란커플링제인 aminopropyl triethoxysilane(APS) 또는 glycidoxypropyl trimethoxysilane(GPTMS)와 반응시켜 silylated acrylic terminated waterborne polyurethane을 제조하였다. 동적 빛 산란법에 의해 측정된 순수한 수분산 폴리우레탄의 평균 직경은 PETA와 APS가 첨가됨에 따라 14.3 nm에서 208.6 nm로 크게 증가하였다. 또한 silylated acrylic terminated waterborne polyurethane 코팅 도막의 연필경도 및 내마모성은 순수한 수분산 폴리우레탄보다 우수하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• Korea-Australia Rheology Journal
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• 제12권2호
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• pp.93-100
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• 2000

The interactions between methylated $\beta$-cyclodextrin (CD) and hydrophobically modified alkali-soluble associative polymers (HASE) were examined by a rheological technique. The effect of "capping" of hydrophobes by methylated $\beta$-cyclodextrin on the viscosity and modulus was evaluated. Model HASE polymers with $C_1$to $C_{20}$ alkyl hydrophobic groups ethoxylated with~10 moles of ethylene-oxide (EO 10) and at concentrations up to 3 wt% were examined. With the addition of methylated $\beta$-CD, the steady shear viscosity profiles shift from a Newtonian profile to one that display a shear-thinning characteristic. Significant "capping" of the hydrophobes occurs for HASE polymers with $C_{l2}$, $C_{16}$ and $C_{20}$ hydrophobes as reflected by the large reduction in the viscosity. However, the steady shear viscosity remains constant when the concentration of $\beta$-CD exceeds 1 wt%, suggesting that $\beta$-CD is not able to fully encapsulate the hydrophobes of the HASE polymer. The temperature variation plots indicate that the activation energy of the HASE-EO10-$C_{20}$ system and $\beta$-CD is dependent on the magnitude of the applied shear stress. These results further reinforce the hypothesis that $\beta$-CD is not able to completely remove all the hydrophobic associations.phobic associations.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.213-213
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• 2011

Gold catalysts supported on TiO2 have shown a unique catalytic behavior on CO oxidation, depending on surface effects. Particle size has an influence on the surface activity. To make monodisperse Au nanoparticles, organic capping ligands, such as alkylthiols, were used by a "greener" synthesis method [1,2] and Au nanoparticles were deposited on TiO2. However, organic capping ligands must be removed for high catalytic activities by the Au nanoparticles without changing the Au size [3]. We used UV ozone treatment to decompose thiol ligands. The samples have been characterized by X-ray photoelectron spectroscopy to examine the surface modification by UV ozone treatment. We show the size distribution of the gold nanoparticles by light scattering analysis and transmission electron microscopy. Au/TiO2 have been prepared using the wetness impregnation method. The catalytic performance of CO oxidation over Au supported on TiO2 under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) were tested. The results show that the catalytic activity depends on particle size and the time of UV ozone exposure, which suggests the role of sulfur bonding in determining the catalytic activity of Au/TiO2 catalysts.

• Korean Chemical Engineering Research
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• 제49권4호
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• pp.411-416
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• 2011

Isophorone diisocyanate(IPDI), polycarbonate diol(PCD), dimethylol propionic acid(DMPA)를 출발물질로 하여 NCO terminated prepolymer가 합성되었다. 이 prepolymer의 NCO기를 아크릴 단량체로 capping하기 위해 0~0.024 mole로 첨가량이 조절된 pentaerythritol triacrylate (PETA)가 첨가되었다. 제조된 acrylic terminated polyurethane 용액의 평균입경은 PETA의 첨가량이 증가함에 따라 증가하였다. 또한 제조된 코팅 필름의 연필경도 및 내마모성은 순수한 수분산 폴리우레탄보다 우수하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.169-169
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• 1999

We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

• 한국재료학회지
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• 제19권2호
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of Information Display
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• 제10권3호
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.