• 공업화학
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• 제16권5호
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• pp.660-663
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• 2005

새로운 산증식제를 개발하기 위하여 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene-sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3)가 우수한 열적 성질을 갖는 방향족 산증식제로서 합성되었다. 이러한 새로운 산증식제들은 광산발생제로부터 생성된 소량의 산에 의해 자동촉매반응으로 p-톨루엔술포산을 생성하였다. 이러한 방향족 술포산 에스터들은 poly(tert-butyl methacrylate, PtBMA) 필름에서 우수한 열적 안정성을 보였고 감도증진제로서 작용하는 최초의 방향성 산증식제임이 증명되었다. 화학 증폭형 포토레지스트에 합성한 방향족 산중식제를 첨가한 경우에 감도가 3~6배 정도 증진되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.47-54
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• 2003

New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

• 대한전자공학회논문지TC
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• 제43권3호
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• pp.68-77
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• 2006

본 논문에서는 4.5-5.5GHz 저잡음 증폭기 (low noise amplifiers, LNAs)를 위한 새로운 구조의 검사용 설계(Design-for-Testability, DfT) 회로를 제안한다. 이러한 검사용 설계회로는 고가의 장비를 사용하지 알고도 저잡음 증폭기의 전압 이득, 잡음 지수, 입력 임피던스, 입력 반사 손실 및 출력 신호대 잡음 전력비를 측정한다. 검사용 설계회로는 $0.18{\mu}m$ SiGe 공정을 이용하여 설계되었으며, 입력 임피던스 정합과 직류 출력 전압 측정을 이용한다. 이러한 회로를 이용한 회로 검사 기술은 검사 방법이 간단하고 검사하는데 드는 비용이 저렴하다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.118-121
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• 2003

A new approach, using MEMS, for improving the performance of high efficiency amplifiers is proposed in this paper. The MEMS tuning element is described as a variable-length shorted CPW stub. Class-E amplifiers can be optimally tuned by these MEMS tuning elements because their operation varies with the impedance of the output tuning circuit. A MEMS tuning element was simulated using full-wave EM simulators to obtain its S-parameters. A Class-E amplifier with the MEMS was designed at 8GHz. The non-linear operation of this amplifier was simulated to explore the effect of the MEMS tuning. Comparing the initially designed amplifier without MEMS, the Power Added Efficiency (PAE) of the amplifier with MEMS is improved from 46.3% to 66.9%. For the amplifier with MEMS, the nonlinear simulation results are PAE = 66.90%, $\eta$(drain efficiency) = 75.89%, and $P_{out}$ = 23.37 dBm at 8 GHz. In this paper, the concept of the MEMS tuning element is successfully applied to the Class E amplifier designed with transmission lines.

• 한국인쇄학회지
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• 제20권2호
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• pp.131-140
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• 2002

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

• ETRI Journal
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• 제24권2호
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• pp.81-96
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• 2002

This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.818-823
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• 2014

A high-gain wideband low noise amplifier (LNA) using $0.25-{\mu}m$ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of $25.1{\pm}0.8dB$ and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1009-1012
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• 2000

In this paper, we have designed and fabricated power PHEMT’s with an unit gate width of 80$\mu\textrm{m}$ and 4 fingers, and MIMIC power amplifiers using the PHEMT’s as well. The PHEMT’s have a 0.2$\mu\textrm{m}$ gate length and source to drain spacing of 3$\mu\textrm{m}$. The characteristics of the fabricated PHEMT’s are 4.08dB of S$\sub$21/ gain at the 35GHz and 317mS/mm of gm, and 62GHz of f$\sub$T/ and 120GHz of f$\sub$max/. The designed and fabricated MIMIC’s power amplifiers with 6 PHEMT’s and MIN capacitors were fully passivated by 1000 Α of Si$_3$N$_4$ film for higher performance and surface protects. The chips were processed using the MINT processes, and size was 3.25 ${\times}$ 1.8$\textrm{mm}^2$. The fabricated MIMIC power amplifiers have RF characteristics such as 11.25dB of S$\sub$21/ gain, 11.37dB of input return-loss and 12.69dB of output return-loss at the 34.55GHz.

• 한국통신학회논문지
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• 제18권10호
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• pp.1518-1526
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• 1993

위성통신 채널에서 고출력 신호 발생을 위한 증폭기는 일반적으로 비선형성에 의한 왜곡이 존재하며, 이는 시스템의 성능을 크게 저하시킨다. 본 논문에서는 이러한 비선형 왜곡을 보상해 주기 위해 LMS 알고리듬을 이용한 새로운 데이타 predistortion 방법을 제안한다. 16-QAM 방식의 경우, constellation 각각의 심볼들에 predistorter를 개별적으로 달아 주어 처리했던 기존의 방식과는 달리, 같은 크기를 갖는 심볼들에 대해서는 동일 메모리를 사용하여 크기차와 위상차에 의해 고출력 증폭기의 입력을 사전왜곡 하므로써 적은 수의 디지탈 메모리(3개의 predistorter)와 빠른 수렴 속도를 갖는 보다 향상된 적응 데이터 predistorter를 제안하였다. 기존의 방법과 비교하므로써 본 논문에서 제안된 방법의 우수성을 보인다.

• 한국항해항만학회지
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• 제26권3호
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• pp.295-302
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• 2002

현재의 디지털 통신시스템은 매우 다양한 디지털 변조방식을 채택하고 있다. 이러한 통신시스템에서는 인접채널에 대한 간섭을 최대한 줄이기 위해서 필연적으로 선형 전력증폭기를 요한다. 선형 전력증폭기는 매우 다양한데 그 중에서 전방궤환 전력증폭기는 구조상 광대역이면서 선형화 정도가 매우 우수하다. 전방궤환 전력중폭기에 사용되는 지연선로의 손실로 인하여 전체효율이 감소한다. 본 논문에서는 이러한 지연선로를 손실이 매우 작은 지연필터를 사용함으로써 효율과 선형성을 동시에 개선하였다. 측정된 결과 ACLR이 약 17.43dB 개선되었으며 이것은 지연필터를 사용함으로써 2.54dB 더 개선되었음을 나타낸다.