[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/JSTS.2014.14.6.818

An X-Ku Band Distributed GaN LNA MMIC with High Gain

Kim, Dongmin (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST))
Lee, Dong-Ho (Department of Information and Communication Engineering, Hanbat National University)
Sim, Sanghoon (RF core Co. Ltd.)
Jeon, Laurence (RF core Co. Ltd.)
Hong, Songcheol (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST))

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.14, no.6, 2014 , pp. 818-823 More about this Journal

Abstract

A high-gain wideband low noise amplifier (LNA) using $0.25-{\mu}m$ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of $25.1{\pm}0.8dB$ and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

Keywords

Broadband amplifiers; distributed amplifiers; gain control; low-noise amplifiers; X-Ku band;

Citations & Related Records

Times Cited By KSCI : 1 (Citation Analysis)

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Cited By KSCI

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