• ETRI Journal
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• 제28권2호
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• pp.231-234
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• 2006

The cancellation performance of a linearization loop is limited by the degree of an amplitude imbalance and a phase imbalance. A delay mismatch causes a phase variation as a function of frequency. Therefore, the cancellation performance and linearization bandwidth are limited by a delay mismatch. The expression for the effects of an amplitude imbalance, a phase imbalance, and a delay mismatch on the characteristics of a linearization loop is derived and analyzed. The simulation results are compared with the results obtained by means of using a commercial simulation tool and the exact agreement is reported. The derived equation could be used in designing a linearization loop and predicting the cancellation performance of the linearization loop usefully. Some useful characteristics, known from the simulation results obtained by using the derived equation, of a linearization loop for designing and implementing feedforward amplifiers are described in detail.

• ETRI Journal
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• 제35권2호
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• pp.226-233
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• 2013

This paper presents a two-stage power-efficient class-AB operational transconductance amplifier (OTA) based on an adaptive biasing circuit suited to low-power dissipation and low-voltage operation. The OTA shows significant improvements in driving capability and power dissipation owing to the novel adaptive biasing circuit. The OTA dissipates only $0.4{\mu}W$ from a supply voltage of ${\pm}0.6V$ and exhibits excellent high driving, which results in a slew rate improvement of more than 250 times that of the conventional class-AB amplifier. The design is fabricated using $0.18-{\mu}m$ CMOS technology.

• 전자공학회논문지A
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• 제33A권4호
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.173-174
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• 2006

High power amplifier (HPA), which is used in transmitter of wireless communication systems, usually works in near saturation point in order to achieve maximum efficiency. In this region, HPA can introduce undesirable nonlinear effects. In this paper, we present a polynomial modeling method for efficient techniques to compensate for nonlinear distortion introduced by nonlinear HPA. Proposed polynomial predistorter inverses actual amplifier. Namely, we derive polynomials of amplifiers from analytical method and the electrical parameters in the data sheet of an actual amplifier and then can derive polynomial predistorter by inversing them. It is an effective and a simple method to compensate nonlinear distortion. SSPA(Solid-state power amplifier) is considered. We also analyze the effects of predistortion on the SER performance of communication system with 16-QAM modulation format. The results have shown the efficiency of this model.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.647-648
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• 2006

This paper presents the design results of peripheral circuits of non-volatile memory of nano floating gate cells. The designed peripheral circuits included command decoder, decoders, sense amplifiers and oscillator, which are targeted with 0.35um technology EEPROM process for operating test and reliable test. The simulation results show each operation and test mode of output voltage for word line, bit line, well and operating of sense amplifier.

• 한국전자파학회논문지
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• 제11권1호
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• pp.110-115
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• 2000

A K-band GaAs MMIC receiver module has been developed using 0.15 ${\mu}{\textrm}{m}$ HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• Carbon letters
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• 제13권1호
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• pp.17-22
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• 2012

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.335-339
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• 2003

This Paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard 0.25$\mu\textrm{m}$ CMOS technology and is shown to deliver 100mW output Power to load with 41％ power added efficiency(PAE) from a 2.5V supply.

• 대한전기학회논문지
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• 제41권1호
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• pp.63-72
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• 1992

A tracking controller which can improve the performance of nonlinear electrohydraulic position control system is designed and implemented. The method is based on augmenting the system with integrators, obtaining the feedback control law which stabilizes the linear part of the original nonlinear system, and then reajusting the feedback gains using the deseribing funtion method to eliminate the limit cycle in the steady state. The proposed control law is implemented using OP amplifiers, and step and ramp response tests are carried out in the electrohydraulic servomechanism. The results show the improvement in both rransient and steady-state response.