| 1 |
Gaskill DK, Jernigan G, Campbell P, Tedesco JL, Culbertson J, VanMil B, Myers-Ward RL, Eddy C Jr, Moon J, Curtis D, Hu M, Wong D, McGuire C, Robinson J, Fanton M, Stitt T, Snyder D, Wang X, Frantz E. Epitaxial graphene growth on SiC wafers. ECS Trans, 19, 117 (2009). http://dx.doi.org/10.1149/1.3119535.
|
| 2 |
Takagi SI, Toriumi A, Iwase M, Tango H. On the universality of inversion layer mobility in Si MOSFET's: Part I - effects of substrate impurity concentration. IEEE Trans Electron Devices, 41, 2357 (1994). http://dx.doi.org/10.1109/16.337449.
DOI
ScienceOn
|
| 3 |
Cheng ZY, Currie MT, Leitz CW, Taraschi G, Fitzgerald EA, Hoyt JL, Antoniadas DA. Electron mobility enhancement in strained- Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates. IEEE Electron Device Lett, 22, 321 (2001). http://dx.doi.org/10.1109/55.930678.
DOI
ScienceOn
|
| 4 |
Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 327, 662 (2010). http://dx.doi.org/10.1126/science.1184289.
DOI
ScienceOn
|
| 5 |
Liao L, Lin YC, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang KL, Huang Y, Duan X. High-speed graphene transistors with a selfaligned nanowire gate. Nature, 467, 305 (2010). http://dx.doi.org/10.1038/nature09405.
DOI
ScienceOn
|
| 6 |
Moon JS, Wong D, Hu M, Hashimoto P, Antcliffe M, McGuire C, Micovic M, Willadson P. 55% PAE and high power Ka-band GaN HEMTs with linearized transconductance via n+ GaN source contact ledge. IEEE Electron Device Lett, 29, 834 (2008). http://dx.doi.org/10.1109/led.2008.2000792.
DOI
ScienceOn
|
| 7 |
Wang H, Nezich D, Kong J, Palacios T. Graphene frequency multipliers. IEEE Electron Device Lett, 30, 547 (2009). http://dx.doi.org/10.1109/led.2009.2016443.
DOI
ScienceOn
|
| 8 |
Wang Z, Zhang Z, Xu H, Ding L, Wang S, Peng LM. A highperformance top-gate graphene field-effect transistor based frequency doubler. Appl Phys Lett, 96, 173104 (2010). http://dx.doi.org/10.1063/1.3413959.
DOI
ScienceOn
|
| 9 |
Moon JS, Curtis D, Hu M, Wong D, Campbell P, Jernigan G, Tedesco JL. Development toward wafer-scale graphene RF electronics. ECS Trans, 19, 35 (2009). http://dx.doi.org/10.1149/1.3119525.
DOI
|
| 10 |
Moon JS, Curtis D, Bui S, Marshall T, Wheeler D, Valles I, Kim S, Wang E, Weng X, Fanton M. Top-gated graphene field-effect transistors using graphene on si (111) wafers. IEEE Electron Device Lett, 31, 1193 (2010). http://dx.doi.org/10.1109/led.2010.2065792.
|
| 11 |
Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR Jr, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on siface sic wafers with a peak transconductance of 600 mS/mm. IEEE Electron Device Lett, 31, 260 (2010). http://dx.doi.org/10.1109/led.2010.2040132.
DOI
ScienceOn
|
| 12 |
Moon JS, Curtis D, Hu M, Wong D, McGuire C, Campbell PM, Jernigan G, Tedesco JL, VanMil B, Myers-Ward R, Eddy C Jr, Gaskill DK. Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates. IEEE Electron Device Lett, 30, 650 (2009). http://dx.doi.org/10.1109/led.2009.2020699.
DOI
ScienceOn
|
| 13 |
Kang HC, Karasawa H, Miyamoto Y, Handa H, Fukidome H, Suemitsu T, Suemitsu M, Otsuji T. Epitaxial graphene top-gate FETs on silicon substrates. International Semiconductor Device Research Symposium, College Park, MD (2009).
|
| 14 |
Wu YQ, Ye PD, Capano MA, Xuan Y, Sui Y, Qi M, Cooper JA, Shen T, Pandey D, Prakash G, Reifenberger R. Top-gated graphene field-effect-transistors formed by decomposition of SiC. Appl Phys Lett, 92, 092102 (2008). http://dx.doi.org/10.1063/1.2889959.
DOI
ScienceOn
|
| 15 |
Kedzierski J, Hsu PL, Healey P, Wyatt PW, Keast CL, Sprinkle M, Berger C, de Heer WA. Epitaxial graphene transistors on SiC substrates. IEEE Trans Electron Devices, 55, 2078 (2008). http://dx.doi.org/10.1109/ted.2008.926593.
DOI
ScienceOn
|
| 16 |
Kedzierski J, Hsu PL, Reina A, Kong J, Healey P, Wyatt P, Keast C. Graphene-on-insulator transistors made using C on Ni chemical- vapor deposition. IEEE Electron Device Lett, 30, 745 (2009). http://dx.doi.org/10.1109/led.2009.2020615.
DOI
ScienceOn
|
| 17 |
Kim KS, Zhao Y, Jang H, Lee SY, Kim JM, Ahn JH, Kim P, Choi JY, Hong BH. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature, 457, 706 (2009). http://dx.doi.org/10.1038/nature07719.
DOI
ScienceOn
|
| 18 |
Moon JS, Gaskill DK. Graphene: its fundamentals to future applications. IEEE Trans Microwave Theory Tech, 59, 2702 (2011). http://dx.doi.org/10.1109/tmtt.2011.2164617.
DOI
ScienceOn
|
| 19 |
Jornet JM, Akyildiz IF. Graphene-based nano-antennas for electromagnetic nanocommunications in the terahertz band. Proceedings of the 4th European Conference on Antennas and Propagation, Barcelona, Spain (2010).
|
| 20 |
Eda G, Fanchini G, Chhowalla M. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Nature Nanotechnol, 3, 270 (2008). http://dx.doi.org/10.1038/nnano.2008.83.
DOI
ScienceOn
|
| 21 |
Schedin F, Geim AK, Morozov SV, Hill EW, Blake P, Katsnelson MI, Novoselov KS. Detection of individual gas molecules adsorbed on graphene. Nature Mater, 6, 652 (2007). http://dx.doi.org/10.1038/nmat1967.
DOI
ScienceOn
|
| 22 |
Bunch JS, Van Der Zande AM, Verbridge SS, Frank IW, Tanenbaum DM, Parpia JM, Craighead HG, McEuen PL. Electromechanical resonators from graphene sheets. Science, 315, 490 (2007). http://dx.doi.org/10.1126/science.1136836.
DOI
ScienceOn
|
| 23 |
Murali R, Brenner K, Yang Y, Beck T, Meindl JD. Resistivity of graphene nanoribbon interconnects. IEEE Electron Device Lett, 30, 611 (2009). http://dx.doi.org/10.1109/led.2009.2020182.
DOI
ScienceOn
|
| 24 |
Morozov SV, Novoselov KS, Katsnelson MI, Schedin F, Elias DC, Jaszczak JA, Geim AK. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys Rev Lett, 100, 016602 (2008). http://dx.doi.org/10.1103/PhysRevLett.100.016602.
DOI
ScienceOn
|
| 25 |
Akturk A, Goldsman N. Electron transport and full-band electronphonon interactions in graphene. J Appl Phys, 103, 053702 (2008). http://dx.doi.org/10.1063/1.2890147.
DOI
ScienceOn
|
| 26 |
Auciello O, Avouris P, Berger C, Butler JE, Carpick RW, De Heer WA, First PN, Fuhrer MS, Hersam MC, Lau CN, Liu J, MacDonald AH, Martel R, Moon JS, Seyller T, Stroscio JA, Srinivasan S, Sumant AV. Beyond silicon: carbon-based nanotechnology. MRS Bull, 35, 273 (2010).
DOI
|
| 27 |
Lee C, Wei X, Kysar JW, Hone J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science, 321, 385 (2008). http://dx.doi.org/10.1126/science.1157996.
DOI
ScienceOn
|
| 28 |
Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA. Electric field in atomically thin carbon films. Science, 306, 666 (2004). http://dx.doi.org/10.1126/science.1102896.
DOI
ScienceOn
|
| 29 |
Berger C, Song Z, Li T, Li X, Ogbazghi AY, Feng R, Dai Z, Alexei N, Conrad MEH, First PN, De Heer WA. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J Phys Chem B, 108, 19912 (2004). http://dx.doi.org/10.1021/jp040650f.
DOI
ScienceOn
|
| 30 |
Nair RR, Blake P, Grigorenko AN, Novoselov KS, Booth TJ, Stauber T, Peres NMR, Geim AK. Fine structure constant defines visual transparency of graphene. Science, 320, 1308 (2008). http://dx.doi.org/10.1126/science.1156965.
DOI
ScienceOn
|
| 31 |
Balandin AA, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau CN. Superior thermal conductivity of single-layer graphene. Nano Lett, 8, 902 (2008). http://dx.doi.org/10.1021/nl0731872.
DOI
ScienceOn
|
| 32 |
Bae S, Kim H, Lee Y, Xu X, Park JS, Zheng Y, Balakrishnan J, Lei T, Ri Kim H, Song YI, Kim YJ, Kim KS, Ozyilmaz B, Ahn JH, Hong BH, Iijima S. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nature Nanotechnol, 5, 574 (2010). http://dx.doi.org/10.1038/nnano.2010.132.
DOI
|
| 33 |
Moon JS. Graphene MOSFETs for RF applications. Proceedings of the 35th Annual GOMACTech Conference, Reno, NV (2010).
|
| 34 |
Geim AK, Novoselov KS. The rise of graphene. Nature Mater, 6, 183 (2007). http://dx.doi.org/10.1038/nmat1849.
DOI
ScienceOn
|
| 35 |
Moon JS, Curtis D, Zehnder D, Kim S, Gaskill DK, Jernigan GG, Myers-Ward RL, Eddy CR Jr, Campbell PM, Lee KM, Asbeck P. Low-phase-noise graphene FETs in ambipolar RF applications. IEEE Electron Device Lett, 32, 270 (2011). http://dx.doi.org/10.1109/led.2010.2100074.
DOI
ScienceOn
|
| 36 |
Wang H, Hsu A, Wu J, Kong J, Palacios T. Graphene-based ambipolar RF mixers. IEEE Electron Device Lett, 31, 906 (2010). http://dx.doi.org/10.1109/led.2010.2052017.
DOI
ScienceOn
|
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