• Journal of the Optical Society of Korea
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• v.14 no.1
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• pp.38-41
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• 2010

We design and fabricate a widely tunable laser diode made of InGaAsP-InP. The diode is monolithically integrated with a wavelength-selective coupled-ring reflector and semiconductor amplifiers. For realization of a compact size device, deeply etched multi-mode interference couplers and square ring resonators composed of total-internal-reflection mirrors are adopted and fabricated using a self-aligned process. It is demonstrated that the laser diode exhibits single mode operation and 16 nm tuning range with side-mode-suppression-ratio exceeding 20 dB.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.359-363
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• 2008

A novel WDM-PON system delivering bidirectional 1.25-Gbps data and broadcasting data is proposed. A subcarrier signal modulates optical carriers of a Fabry-Perot-laser-diode based broadband light source to broadcast to all users. Reflective semiconductor optical amplifiers are used as modulators for the baseband data at both the optical line terminal and the remote optical network unit for a channel. Bit error rate and error vector magnitude were measured to demonstrate the proposed scheme.

• Journal of the Optical Society of Korea
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• v.17 no.4
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• pp.305-311
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• 2013

Using receiver eigenmodes, we perform a time-dependent analysis of optical receivers whose optical inputs are corrupted by the amplified spontaneous emission. We use Gaussian receivers for the analysis with Gaussian input pulses. We find the number of contributing eigenmodes increases as the measurement time moves from the pulse center towards the pulse edges at the output of the optical receiver's electrical filter. This behavior is dependent on the bandwidth ratio between the optical and the electrical filters as well as the input pulse's time width.

• Korean Journal of Optics and Photonics
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• v.29 no.1
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• pp.32-39
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• 2018

The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.

• Journal of IKEEE
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• v.23 no.2
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• pp.403-406
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• 2019

We propose a low-loss on-chip transformer using an auxiliary primary part (APP) for an output matching network for fully integrated CMOS power amplifiers. The APP is designed using a fifth metal layer while the primary and secondary parts are designed using a sixth metal layer with a width smaller than that of the primary and secondary parts of the transformer to minimize the substrate loss and the parasitic capacitance between the primary and secondary parts. By adapting the APP in the on-chip transformer, we obtain an improved maximum available gain value without the need for any additional chip area. The feasibility of the proposed APP structure is successfully verified.

• Journal of IKEEE
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• v.22 no.4
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• pp.1019-1024
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• 2018

In this paper, we suggest a combined cost function to find out the optimal operation of an envelope tracking system, and evaluated its performance with Quadrature Amplitude Modulation (QAM) waveform, with which envelope tracking coefficients for the peak drain efficiency and the bandwidth of power amplifiers are determined. Based on the classical envelope tracking theory, the operation of the supply modulator, which is a key part of the envelope tracking process, is modeled and analyzed mathematically. Then characteristics of the modulator by setting envelope shaping function as a cubic polynomial and sweeping the coefficients of this function was analyzed. By sweeping the coefficients, efficiency and bandwidth at each condition with 64-QAM signal was used to obtain optimal point of the supply modulator. Compared to the conventional shaping functions, the optimized function showed the bandwidth reduction by 12.7 percent point while the efficiency was maintained.

• Journal of IKEEE
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• v.22 no.4
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• pp.1050-1055
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• 2018

In this paper, we analyzed the sensitivity of matching elements for the dual-band operation of a power amplifier with composite right/left-handed (CRLH) transmission lines. Metamaterial theory enables CRLH transmission to support arbitrary impedance matching at dual frequencies. In general, at sub-GHz range, the CRLH matching networks are commonly implemented with lumped elements, which are prone to manufacturing distribution. In order to reduce the effect from the distribution of element values in design, we suggest a method to analyze the sensitivity of matching elements from the performance aspect of power amplifiers. Based on the analysis, a 40dBm dual-band power amplifier operating at 0.7GHz and 1.5GHz is designed.

• Current Optics and Photonics
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• v.2 no.6
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• pp.519-524
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• 2018

We propose a transverse load sensor with reconfigurable measurement accuracy based on a microwave photonic filter in the $K_u$ band, incorporating a polarization-maintaining fiber Bragg grating. A prototype sensor with a reconfigurable measurement accuracy tuning range from 6.09 to 9.56 GHz/(N/mm), and corresponding minimal detectable load range from 0.0167 to 0.0263 N/mm, is experimentally demonstrated. The results illustrate that up to 40% manufacturing error in the grating length can be dynamically calibrated to the same corresponding measurement accuracy for the proposed transverse load sensor, by controlling the semiconductor optical amplifier's injection current in the range of 154 to 419 mA.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.69-73
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• 2002

We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.477-483
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• 1986

This paper studies the design of a CMOS operational amplifier for the switched capacitor filter by computer simulation, and presents the results of measurement. The operational amplifier composed of two stages is fabricated in the CMOS digital process. The DC voltage gain of the operational amplifier is 66dB, and the unity gain bandwidth is 833kHz. These results satisfy the performance requirmance requirements for the operational amplifier of the switched capacitor filter.