• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.835-841
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• 1995

The deposition properties of Si$_3$N$_4$ deposited by low pressure chemical vapor deposition were studied to evaluate Si$_3$N$_4$as part of multi-layer coatings for anti-oxidation and anti-wear coating of graphite in the propellant-burning environment. Si$_3$N$_4$was deposited on the pack-SiC coated graphite and the tendencies of deposition rate and surface morphology changes with temperatures and reaction gas ratios were investigated. In low deposition temperatures the deposition rate increased tilth increasing temperature but in high temperatures the deposition rate decreased with increasing temperature. The grain size of Si$_3$N$_4$decreased with increasing temperature. In condition that the range of reaction gas ratios is 20$\leq$NH$_3$/SiH$_4$$\leq$40, the deposition rate and surface morphology did not change. The Si$_3$N$_4$deposited at 800~130$0^{\circ}C$ was amorphous, and by post-annealing at 130$0^{\circ}C$ in a $N_2$ambient, the Si$_3$N$_4$crystalized.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of the Korean Electrochemical Society
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• v.12 no.2
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• pp.189-195
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• 2009

$\beta-Ga_{2}O_{3}$ nanorods were synthesized by chemical vapor deposition method using nickel-oxide nanoparticle as a catalyst and gallium metal powder as a source material. The average diameter of nanorods was around 160 nm and the average length was $4{\mu}m$. Also, we confirmed that the synthesis of nanorods follows the vapor-solid growth mechanism. From the results of X-ray diffraction and HR-TEM observation, it can be found that the synthesized nanorods consisted of a typical core-shell structure with single-crystalline $\beta-Ga_{2}O_{3}$ core with a monoclinic crystal structure and an outer amorphous gallium oxide layer. Li/$\beta-Ga_{2}O_{3}$ nanorods cell delivered capacity of 867 mAh/g-$\beta-Ga_{2}O_{3}$ at first discharge. Although the Li/$\beta-Ga_{2}O_{3}$ nanorods cell showed low coulombic efficiency at first cycle, the cell exhibited stable cycle life property after fifth cycle.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.228-243
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• 1997

The changes of microstructures, morphology of sclerotic dentin and bonding aspects generated by an adhesive resin was investigated. Incisors and premolars showing natural cervical abrasions were collected and conditioned with 10 % phosphoric acid or 10 % maleic acid. The sclerotic dentin specimens were then rinsed and blot-dried and applied with dentin adhesive (All Bond 2) to the conditioned dentin surface. To examine the morphologic change of the sclerotic dentin specimen after etching and bonding procedure, the treated specimens were examined by SEM. To analyze the chemical composition of sclerotic dentin and crystals occluding dentinal tubules, the sclerotic dentin specimen was powdered and examined with X-ray Diffractometer. To investigate the Ca/P weight percent ratio within the dentinal tubules, the sclerotic dentin specimen was fractured perpendicularly to the long axis of the tooth from the center of cervical abrasion lesion and then examined with EDX(Energy Dispersive X-ray) microanalyzer. The results were as follows : 1. The increased width of peritubular dentin and the depositions of the irregular amorphous materials within the dentinal tubules were showed in the sclerotic dentin specimens. 2. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the lateral side of tubules rather than cross-sectional tubule openings was showed exclusively at the incisal and gingival incline of the specimens. 3. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the hybrid layer was not formed evidently and the resin tag was not formed or shortly penetrated into the tubules with the thinner diameter. 4. According to the results of XRD analysis of the sclerotic dentin specimen, Hydroxyapatite and Octacalcium phosphate were predominent, however, Whitlockite crystals were rare. 5. The mean Ca/P weight percent ratio analysed from 5 fractured sclerotic dentin specimens was $2.322{\pm}0.170$ at the intertubular dentin, $1.826{\pm}0.051$ within the dentinal tubule.

• Applied Microscopy
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• v.26 no.4
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• pp.389-399
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• 1996

In order to understand the morphological differences between two different organic loadings by its upstream, and to compare with other algal groups with references, the fine structure of blue-green algae, Microcystis aeruginosa Kitzing, taken from two branches, Tongbok and Bosung stream of Lake Chuam, Korea pennisula was examined. It showed extinct differences in most physicochemical factors between both branches, except water temperature and pH values. The concentrations of total phosphorus in Tongbok branch were twice as those of Bosung. M. aeruginosa cells were enumerated totally $1.2X10^4cells/ml$ and these individuals in branch of Tongbok were close to two times as much as Bosung. In light and electron microscopy, natural M. aeruginosa colonies formed irregular shape and non-directional array in amorphous matrix. They were consisted of many kinds of cells, youngs or olds in cell division, solitary, and various size of cells. Each cell ranged from 2.61 to $5.40{\mu}m$ in diameter, and averaged as $3.54{\pm}0.19{\mu}m$. In cytoplasm, they contained a number of inclusions in various size, shape and appearances. Among them, polyhedral bodies or carboxysomes, a structured granules, photosynthetic lamellae or thylakoids, and gas vacuoles were prominent and easy to recognize. Although it was failed to find the definable morphological variations in the ultrastructure of M. aeruginosa in terms of algal habitual environments, some useful characters were founded, outer layer of cell wall, polyhedral bodies and gas vacuoles, in blue-green algal classification and taxonomy.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.851-857
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• 2004

The stabilizing characteristics of heavy metals in the silicate glass (SD), borosilicate glass (BD), and leadsilicate glass (PD) containing Electric Arc furnace (EAF) dust were studied by the Toxic Characterization Leaching Procedure (TCLP) test. Also, the dependence of the amount of EAF dust upon structural changes of SD, BD, and PD glasses and the TCLP results were investigated by the XRD and FT-IR spectroscopy. In the XRD results, all of SD, BD, and PD specimens containing dust up to 30 wt% were amorphous without crystallizing. In the TCLP test, the concentration of heavy metals leached from the glasses increased with the amount of EAF dust added. The SD specimen series showed the lowest heavy metal leaching and the heavy metal leachate of the PD specimens were lower than those of the BD specimens. But, the Pb leaching from the PD specimens was the highest in the PD glass composition due to the high Pb content. The value of oxygen/network former ratio could be used to compare the chemical durability within the same glass series, but not proper to do between the different glass series. Adding the EAF dust to the SD mother glass, decreased the Si-O-Si symmetry and increased the non-bridging oxygen, which weakened the structure and decreased the chemical durability of glasses. In the BD series glasses, the addition of EAF dust caused the structural changes from tetra-borate group to di-borate group and the formation of the 2-dimensional layer structure of pyre- and ortho- borate, which decreased the chemical durability of glasses. It is concluded that SD series glass among the 3 kinds of glasses is the most effective to stabilize the heavy metals of EAF dust.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.339-344
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• 2001

An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.