Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 1 Issue 1
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- Pages.67-72
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- 1992
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- 1225-8822(pISSN)
Growth of Ti on Si(111)-)-$7{\times}7$ Surface and the Formation of Epitaxial C54 $TiSi_2$ on Si(111) Substrate
Si(111)-$7{\times}7$ 면에서 Ti 성장과 C54 $TiSi_2$ /Si(111) 정합 성장에 관하여
- Kun Ho Kim (Department of Physics, Gyeongsang National University, Chinju 660-701 Korea) ;
- In Ho Kim (Department of Physics, Gyeongsang National University, Chinju 660-701 Korea) ;
- Jeoung Ju Lee (Department of Physics, Gyeongsang National University, Chinju 660-701 Korea) ;
- Dong Ju Seo (Department of Physics Eduction, Chosun University, Kwangju 501-759, Korea) ;
- Chi Kyu Choi (Department of Physics, Cheju, National University, Cheju 690-756, Korea) ;
- Sung Rak Hong (Department of Physics, Cheju, National University, Cheju 690-756, Korea) ;
- Soo Jeong Yang (Department of Physics, Cheju, National University, Cheju 690-756, Korea) ;
- Hyung Ho Park (ETRI, P.O. Box 8, Taeduk Science Town, Taejeon 305-606, Korea) ;
- Joong Hwan Lee (ETRI, P.O. Box 8, Taeduk Science Town, Taejeon 305-606, Korea)
- Published : 1992.02.01
Abstract
The growth of Ti on Si(111)-
고에너지 반사 전자회절기(RHEED) 및 투과전자현미경(HRTEM)을 이용하여 Si(111)-7
Keywords