• 대한기계학회논문집B
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• 제33권10호
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• pp.797-802
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• 2009

Large area crystallization of amorphous silicon thin-films on glass substrates is one of key technologies in manufacturing flat displays. Among various crystallization technologies, the Joule induced crystallization (JIC) is considered as the highly promising one in the OLED fabrication industries, since the amorphous silicon films on the glass can be crystallized within tens of microseconds, minimizing the thermally and structurally harmful influence on the glass. In the JIC process the metallic layers can be utilized to heat up the amorphous silicon thin films beyond the melting temperatures of silicon and can be fabricated as electrodes in OLED devices during the subsequent processes. This numerical study investigates the heating mechanisms during the JIC process and estimates the deformation of the glass substrate. Based on the thermal analysis, we can understand the temporal and spatial temperature fields of the backplane and its warping phenomena.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1761-1763
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• 1998

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.6-12
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• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• 한국재료학회지
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• 제11권6호
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• pp.477-482
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• 2001

쐐기형 전극 사이에 열처리전 비정질 ($Fe_{1-x}$ $Co_{x}$ )$_{89}$ $Zr_{ 11}$ (x=0~1.0) 자성막이 증착된 MSAW 소자를 구성하고 외부 인가자기장에 의한 MSAW 속도변화율을 조사하였다. 그 결과 MSAW 속도변화율은 직류 인가자기장, 구동주파수, 자성막의 두께 및 조성에 민감하게 의존하였으며, 특히 구동주파수 및 자성막의 두께가 증가할수록 증가함을 확인하였다. 열처리전 시편에서 나타난 최대 속도변화율은 x=0.8에서 얻어진 0.062%였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• 한국자기학회지
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• 제5권5호
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• pp.528-532
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• 1995

Ferromagnetic resonance experiments have been used to investigate the magnetic properties of amorphous $Co_{89.5}Zr_{10.5}$ thin films deposited by DC magnetron sputtering method. In the thickness range from $350\;{\AA}$ to $3,200\;{\AA}$, measurements were carried out in a static magnetic field perpendicular and parallel to the film plane and in a conventional 9.44 GHz spectrometer at room temperature. The ferromagnetic resonance spectra by the field perpendicular to the film plane showed standing spin wave. The spacing and the relative intensities between the various spin wave resonance peaks are analysed considering surface magnetic anisotropy. The surface magnetic anisotropy constant ($K_{so},\;K_{sd}$) of amorphous $Co_{89.5}Zr_{10.5}$ thin films are $0.02\;erg/\textrm{cm}^2$ and $0.55\;erg/\textrm{cm}^2$ respectively regardless of the film thickness except for $3,200\;{\AA}$ film. In case of $3,200\;{\AA}$ these values are $0.46\;erg/\textrm{cm}^2$ and $0.55\;erg/\textrm{cm}^2$ respectively.

• 대한금속재료학회지
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• 제47권1호
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.