• The Korean Journal of Ceramics
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• 제4권1호
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• pp.1-4
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• 1998

Diamond film was deposited on Mo substrate at atmospheric pressure using combustion flame apparatus with the addition of H2. At a temperature above 100$0^{\circ}C$, parts of the film were converted into graphites and these were etched by hydrogen atoms. With increasing $C_2H_2/O_2$ ratio, the nucleation density of the film increased. But the greater part of the film was formed with cauliflower-shaped amorphous carbon. These amorphous carbn were crystallized etching amorphous carbon.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.475-480
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• 2018

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

• Bulletin of the Korean Chemical Society
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• 제20권5호
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• pp.517-524
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• 1999

By heating the magnesiumsilicate (Mg2SiO4:forsterite) xerogel in carbon dioxide, carbonaceous component was intentionally introduced into the amorphous solid precursor. Carbon was introduced homogeneously as unidentate carbonate. Upon being heated at 800 。C in carbon dioxide, the xerogel which had homogeneously distributed carbonaceous component in it crystallized into a single phase product of a new crystalline material, which had approximate composition of Mg8Si4Ol8C. The powder X-ray diffraction pattern of the new crystalline material did not match with any known crystalline compound registered in the powder diffraction file. Crystallization from amorphous xeroget to the new crystalline phase occurred in a very narrow range of temperature, from 750 。C to 850 。C in carbon dioxide, or in dty oxygen. Upon being heated above 850 。C, carbonaceous component was expelled from the product, accompanied by irreversible transition from the new crystalline material to forsterite.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.706-710
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• 2007

Ti-containing amorphous carbon (a-C:Ti) films shows attractive mechanical properties such as low friction coefficient, good adhesion to various substrate and high wear resistance. The incorporation of titanium in a-C films is able to improve the electrical conductivity, friction coefficient and adhesion to various substrates. In this study, a-C:Ti films were depositied on Si wafer by closed-field unbalanced magnetron (CFUBM) sputtering system composed two targets of carbon and titanium. The tribological properties of a-C:Ti films were investigated with the increase of DC bias voltage from 0 V to - 200 V. The hardness and elastic modulus of films increase with the increase of DC bias voltage and the maximum hardness shows 21 GPa. Also, the coefficient of friction exhibites as low as 0.07 in the ambient. In the result, the a-C:Ti film obtained by CFUBM sputtering method improved the tribological properties with the increase of DC bias volatage.

• 한국표면공학회지
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• 제33권2호
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• pp.69-76
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• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.406-408
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• 1999

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

• 한국진공학회지
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• 제16권2호
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• pp.122-127
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• 2007

본 연구에서는 비정질 탄소박막들(a-C, a-C:H, a-C:N)을 흑연타겟이 부착되어진 비대칭 마그네트론 스퍼터링법을 이용하여 증착하였으며, 음의 DC 바이어스 전압의 효과를 알아보기 위해 증착가스 압력내에서 200 V를 인가하여 탄소박막들을 제작하였다. 수소화된 비정질 탄소박막과 질화탄소박막은 각각 스퍼터링 가스로써 아세틸렌과 질소를 주입하여 제작하였다. 결과적으로 26.5 GPa의 높은경도와 0.1 nm의 낮은 거칠기 그리고 접착력은 30.5 N를 가지는 수소화된 비정질 탄소박막을 합성하였으며, 32 N의 좋은 접착 특성을 나타내는 질화 탄소 박막을 합성하였다. 본 논문에서는 아세틸렌과 질소 가스의 효과와 음의 DC 바이어스 전압에 따른 비정질 탄소박막들의 구조적 특성과 물리적 특성과의 관계를 규명하였다.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• 한국재료학회지
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• 제13권3호
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.