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http://dx.doi.org/10.3740/MRSK.2003.13.3.150

Effects of Deposition Conditions on the Properties of Amorphous Carbon Nitride Thin Films by PECVD  

Moon, Hyung-Mo (Dept. of Materials Science and Metallurgical Engineering, Sunchon National University)
Kim, Sang-Sub (Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University)
Publication Information
Korean Journal of Materials Research / v.13, no.3, 2003 , pp. 150-154 More about this Journal
Abstract
Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.
Keywords
carbon nitride film; PECVD; amorphous film; film property;
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