• 한국재료학회지
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• 제18권10호
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.145-148
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• 2006

The protocrystalline silicon (pc-Si:H) multilayer solar cell is very promising owing to its fast stabilization with low degradation against light irradiation. However, the pc-Si:H multi layers have not extensively been investigated in detail on its material characteristics yet. We present the material characteristics of pc-Si:H multilayer using a transmission electron microscopy(TEM), and Raman spectroscopy. In addition, we present the superior light-soaking behavior of the pc-Si:H mutt i layer solar cell. A TEM micrograph shows that a pc-Si:H multilayer has a repeatedly layered structure and crystalline-like objects in a-Si:H matrix. A Raman spectra introduces improved short-range-order and medium-range-order in pc-Si:H multilayer. As a result the excellent metastability of the pc-Si:H multilayer solar cell is primarily due to the repeatedly layered structure that improves a structural order in absorber layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.957-961
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• 2004

In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.153-154
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• 2005

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_Y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at 120$^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at 400$^{\circ}C$ and calcination at 840$^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factro in determining whether it is easy to form the high Tc phase or not, because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

• 자원리싸이클링
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• 제25권3호
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• pp.82-87
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• 2016

차세대 이차전지로서 주목받고 있는 리튬-공기 전지와 소듐-공기 전지를 에테류계 전해질을 이용하였을 시 방전 후 생성물을 분석 하였다. FESEM을 통하여 확인한 결과 리튬-공기 전지와 소듐-전지의 방전 후 생성된 입자의 형태는 좁쌀 모양을 보였으며, 두 전지 시스템에서 큰 차이를 보이지 않았다. 하지만 XRD를 통하여 확인 하였을 시 리튬-공기 전지는 비정질 형태의 $Li_2O_2$ 그리고 소듐-공기에서는 결정질의 $NaO_2$가 생성되는 것을 확인 할 수 있었다. 본 연구를 통하여 차세대 전지 시스템으로 주목받고 있는 리튬-공기 전지와 소듐-공기 전지의 기본적인 구동 원리를 이해할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.270-271
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• 2005

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_Y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factro in determining whether it is easy to form the high Tc phase or not. because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

• 한국재료학회지
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• 제12권7호
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• pp.540-544
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• 2002

Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.

• 한국표면공학회지
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• 제32권3호
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• pp.307-311
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• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

• 대한화학회지
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• 제51권2호
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• pp.178-185
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• 2007

펜타실 구조와 유사한 제올라이트형 결정성 보로실리케이드를 수증기 쪼임법으로 제조하였다. 실제 여러 종류의 서로 다른 붕소화합물 원료를 사용하여 만든 다양한 조성의 Na2O.SiO2.B2O3.TBA2O 겔을 건조시켜 얻은 무정형 분말을 수열합성 분위기에서 수증기를 쪼임으로써 펜타실 구조를 갖는 보로실리케이트 제올라이트를 합성하였다. 이때 MFI와 MEL 구조가 90:10의 비율을 혼합되어 있는 새로운 중간구조 물질이 얻어 졌다. 본 연구로부터, 젖어 있는 반응성 고체상 물질이 수증기와 높은 pH 분위기에서 결정화가 이루어짐을 확인하였다. X-선 회절법으로 분석한 결과 생성물은 우수한 결정성을 가질뿐만 아니라 독특한 촉매적 성질을 보일것으로 예상되는 구조를 갖는다. 또한 반전중심을 갖는 MFI 구조의 펜타실 층이 규칙적으로 쌓이는 모양을 보이지만 이는 MEL 구조의 거울상 층으로 이루어진 결함에 의해 방해된다. 생성물은 77 K 질소흡착법에 의하면 미세기공 부피가 0.160 cc/g 로서 순수한 MFI 구조 물질이 갖는 0.119 cc/g 보다 더 크며, 비교적 넓은 비표면적(~600 m2/g)을 보인다. 적외선 스펙트럼에서는 900.75 cm-1에서 흡수띠를 보이는데, 이는 붕소가 결정성 실리케이트의 사면체 구조내에 위치함을 뜻한다.