• Journal of Korea Foundry Society
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• v.40 no.6
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• pp.135-145
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• 2020

Aluminum cast iron has excellent oxidation resistance, sulfurization resistance, and corrosion resistance. However, the ductility at room temperature is insufficient, and at temperatures above 600?, the strength drops sharply and practicality is limited. In the case of heat-resistant cast iron, high-temperature materials containing Cr and Ni account for 30 to 50% or more. However, these high-temperature materials are expensive. Aluminum heat-resistant cast iron is considered as a substitute for expensive heat-resistant materials. Oxidation due to the aging temperature and holding time conditions increases more in 0 wt.% Al-cast iron than in 2 and 4 wt.% Al-cast iron according to oxidized weight and gravimetric oxide layer thickness measurements. As a result of observing the cross-section of the oxide layer, it was found to contain 0 wt.% of Al-cast iron silicon oxide-containing SiO₂ or Fe₂SiO₄ oxide film. In cast iron containing aluminum, the thickness of the internal oxide layer due to aluminum increases as the aging temperature and retention time increase, and the amount of the iron oxide layer generated on the surface decreases.

• Applied Microscopy
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• v.43 no.4
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• pp.173-176
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• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.250-258
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• 2023

Ceramic oxide layer was formed on the surface of high silicon aluminum alloy by using PEO (plasma electrolytic oxidation) process. The microstructure of the oxide layer was analyzed using scanning electron microscopy (SEM) and x-ray diffraction patterns (XRD). The high silicon aluminum alloy prior to PEO process consists of Al, Si and Al₂Cu phases in XRD analysis, whereas Al₂Cu phase selectively disappeared after PEO treatment. Considerable decrease of relative intensity in most of peaks in XRD results of the high silicon aluminum alloy treated by PEO process was observed. It may be attributed to the formation of amorphous phases after PEO treatment. The corrosion behavior of the high silicon aluminum alloy treated by PEO process was investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that the high silicon aluminum alloy treated by PEO process shows greater corrosion resistance than that untreated by PEO process.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.121-127
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• 2014

In this study, in order to improve corrosion resistance and wear resistance of aluminum, surface treatment was made by anodizing with oxalic acid solution and sealing with nano-diamond powder. Average size of nano-diamond powder was 30nm. Anodizing with oxalic acid made many pores in the aluminum oxide layer. Pore size and oxide thickness were investigated by scanning electron microscope (SEM). Pore size increased as temperature increased and voltage increased. It was possible to make oxide layer with pore diameter more than 50 nm. Oxide thickness increased as temperature and voltage and treatment time increased. Oxide layer with above $10{\mu}m$ thickness was made. Aluminum oxide layer with many pores was sealed by water with nano-diamond powder. Surface morphology was investigated by SEM. After sealing treatment with nano-diamond powder, corrosion resistance, wear resistance and hardness increased.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.414-419
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• 1994

Surface of Pt/$Al_2O_3$ model catalyst was produced on an aluminum foil with surface area of 1 $cm^2$ The aluminum surface was oxidized under $10 ^5Torr$Torr oxygen and platinum was deposited on top of the oxide layer using a plasma evaporation source. Conversion of I-butene was performed on the model catalyst surface. Isomerization was the major reaction in I-butene conversion on the aluminum oxide layer. Addition of Pt on the aluminum oxide layer induces hydrogenation of I-butene. Selectivity for the hydrogenation increases as the amount of Pt on alumina increases.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1169-1173
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• 2015

This paper presents vertical carbon nanotube (CNT) field effect transistors (FETs). For the first time, the author successfully fabricated vertical CNT-based FETs on an anodized aluminum oxide (AAO) template by using atomic layer deposition (ALD). Single walled CNTs were vertically grown and aligned with the vertical pores of an AAO template. By using ALD, a gate oxide material (Al₂O₃) and a gate metal (Au) were centrally located inside each pore, allowing the vertical CNTs grown in the pores to be individually gated. Characterizations of the gated/vertical CNTs were carried and the successful gate integration with the CNTs was confirmed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.5
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• pp.495-500
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• 1988

The effectiveness of tri layer resist (TLR) technique is compared with that of single layer resist (SLR) technique in order to make a 0.8um pattern with the linewidth deviation of 10 percents. SLR technique is not appropriate to shape the micro-pattern on oxide and aluminum steps because of the standing wave effect and the light scattering effect in shaping the resist pattern. On the contrary, the uniform line with a width of 0.8um on oxide and aluminum steps can be formed by TLR technique, reducting such effects. The planarization and the light absorption coefficient of the bottom layer resist in TLR are optimized by exposing it to ultra violet light after baking it for 30min at 230\ulcorner. An uniform line with a width of 0.8um on oxide step is defined with the light absorption coefficient of 0.85 whereas that on aluminum step is defined with 0.95.

• Nuclear Engineering and Technology
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• v.42 no.4
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• pp.434-441
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• 2010

The activation products of aluminum and argon are key radionuclides for operational and environmental radiological safety during the normal operation of open-tank-in-pool type research reactors using aluminum-clad fuels. Their activities measured in the primary coolant and pool surface water of HANARO have been consistent. We estimated their sources from the measured activities and then compared these values with their production rates obtained by a core calculation. For each aluminum activation product, an equivalent aluminum thickness (EAT) in which its production rate is identical to its release rate into the coolant is determined. For the argon activation calculation, the saturated argon concentration in the water at the temperature of the pool surface is assumed. The EATs are 5680, 266 and 1.2 nm, respectively, for Na-24, Mg-27 and Al-28, which are much larger than the flight lengths of the respective recoil nuclides. These values coincide with the water solubility levels and with the half-lives. The EAT for Na-24 is similar to the average oxide layer thickness (OLT) of fuel cladding as well; hence, the majority of them in the oxide layer may be released to the coolant. However, while the average OLT clearly increases with the fuel burn-up during an operation cycle, its effect on the pool-top radiation is not distinguishable. The source of Ar-41 is in good agreement with the calculated reaction rate of Ar-40 dissolved in the coolant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.314-317
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.334-334
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• 2011

We applied N-ion bombardment and heat treatment to the Cu thin films deposited on aluminum oxide layer for the enhancement of adhesion. With e-beam evaporation method. $1,000{\AA}$ thick Cu pre-bombardment layer was deposited on the aluminum oxide surface and then N-ion beam was bombared in order to mix the atoms at the film/substrate interface. Additional $4,000{\AA}$-thick Cu film was the coated. Subsequently, the ion mixide Cu on aluminum oxide was annealed at $200^{\circ}C$ and $300^{\circ}C$ in vacuum.