• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.47-52
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• 2015

In this paper, the performance of uncoated- and Titanium nitride aluminium TiAlN-PVD coated- carbide twist drills were investigated when drilling aluminium alloy, Al 6061. This research focuses on the optimization of drilling parameters using the Taguchi technique to obtain minimum surface roughness and thrust force. A number of drilling experiments were conducted using the L9 orthogonal array on a CNC vertical machining center. The experiments were performed on Al 6061 material l blocks using uncoated and coated HSS twist drills under dry cutting conditions. Analysis of variance(ANOVA) was employed to determine the most significant control factors. The main objective is to find the important factors and combination of factors influence the machining process to achieve low surface roughness and low cutting thrust force. From the analysis of the Taguchi method indicates that among the all-significant parameters, feed rate are more significant influence on surface roughness and cutting thrust than spindle speed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.115-116
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• 2006

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.382-387
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• 2013

PURPOSE. Although several surface treatments have been recently investigated both under in vitro and in vivo conditions, controversy still exists regarding the selection of the most appropriate zirconia surface pre-treatment. The purpose of this study was to evaluate the effect of alumina (Al) and aluminium nitride (AlN) coating on the shear bond strength of adhesive resin cement to zirconia core. MATERIALS AND METHODS. Fifty zirconia core discs were divided into 5 groups; air particle abrasion with 50 ${\mu}m$ aluminum oxide particles ($Al_2O_3$), polishing + Al coating, polishing + AlN coating, air particle abrasion with 50 ${\mu}m$ $Al_2O_3$ + Al coating and air particle abrasion with 50 ${\mu}m$ $Al_2O_3$ + AlN coating. Composite resin discs were cemented to each of specimens. Shear bond strength (MPa) was measured using a universal testing machine. The effects of the surface preparations on each specimen were examined with scanning electron microscope (SEM). Data were statistically analyzed by one-way ANOVA (${\alpha}$=.05). RESULTS. The highest bond strengths were obtained by air abrasion with 50 ${\mu}m$ $Al_2O_3$, the lowest bond strengths were obtained in polishing + Al coating group (P<.05). CONCLUSION. Al and AlN coatings using the reactive magnetron sputtering technique were found to be ineffective to increase the bond strength of adhesive resin cement to zirconia core.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.167-167
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• 2012

Aluminium-zinc-tin oxide (AZTO) 박막 트랜지스터는 Spin-coating 방법으로 제작되었다. AZTO용액의 용매는 2-Methoxyethanol, 용질은 각각 Aluminium nitride, Zinc acetate dihydrate, Tin chloride가 사용되어 제작되었다. 용액의 안정성을 위해서 미량의 Mono ethyl amine이 첨가되었다. 용액의 Zn:Sn의 몰 비율은 1 : 1로 고정 되었으며 Al의 mole비를 다양하게 늘리면서 실험을 진행하였다. 이렇게 만들어진 AZTO용액은 3,000 rpm으로 30초간 Spin-coating하였으며 이후 Furnace system을 통하여 $500^{\circ}C$의 온도로 1시간 동안 후열처리 공정을 진행하였다. AZTO박막을 활성층으로 제작된 박막 트랜지스터는 Al의 비율이 늘어남에 따라 처음엔 이동도가 증가하였으나 이후 이동도가 낮아지며 소자특성이 나빠지는 것을 보였다. 이러한 현상의 원인을 알아보고자 물리적, 전기적, 광학적 분석을 통해서 Al양의 변화가 박막트랜지스터 구동에 미치는 영향을 해석하였다. 먼저 AZTO용액은 열중량측정/시차열분석법(Thermo Gravimetry/Differential Thermal Analysis)을 이용하여 spin-coating 이후 후 열처리 온도 결정 및 박막의 변화를 관찰하였으며, X-선 분광(X-ray photoelectron spectroscopy)을 이용하여 박막의 조성 및 전자구조의 변화를, 타원분광해석법(Spectroscopic Ellipsometry)분석을 통하여 밴드 갭과 전도대 이하 밴드 갭 내에 존재하는 결함상태변화를 관찰하였다. AZTO 박막 내의 Al양을 조절하는 것은 박막내의 에너지 준위의 변화를 야기하고 그로인해 박막트랜지스터의 특성을 변화킨다는 결과를 도출하였다.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3258-3264
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• 2012

Aluminum oxide ($Al_2O_3$) nanofibers were treated thermally under an ammonia ($NH_3$) gas stream balanced by nitrogen to form a thin aluminum nitride (AlN) layer on the nanofibers, resulting in the enhancement of thermal conductivity of $Al_2O_3$/epoxy nanocomposites. The micro-structural and morphological properties of the $NH_3$-assisted thermally-treated $Al_2O_3$ nanofibers were characterized by X-ray diffraction (XRD) and atomic force microscopy (AEM), respectively. The surface characteristics and pore structures were observed by X-ray photoelectron spectroscopy (XPS), Zeta-potential and $N_2$/77 K isothermal adsorptions. From the results, the formation of AlN on $Al_2O_3$ nanofibers was confirmed by XRD and XPS. The thermal conductivity (TC) of the modified $Al_2O_3$ nanofibers/epoxy composites increased with increasing treated temperatures. On the other hand, the severely treated $Al_2O_3$/epoxy composites showed a decrease in TC, resulting from a decrease in the probability of heat-transfer networks between the filler and matrix in this system due to the aggregation of nanofiber fillers.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1893-1895
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• 2001

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.354.2-354.2
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• 2014

최근 반도체 산업의 발전에 따라 반도체 소자 내 배선재료로 사용되던 Aluminium (Al)의 대체물로 Copper (Cu)가 사용되고 있다. Cu는 Al보다 우수한 전도성과 비용이 저렴하다는 장점이 있으나 반도체 기판과의 확산으로 이를 해결해야만 하는 문제점이 있다. 이는 Si와 Cu사이에 확산방지막을 사용하여 해결할 수 있는데 Hafnium Nitride (HfN) 박막은 다른 물질과 비교해 고온에서의 안정성과 낮은 비저항을 가지고 있어 주목을 받고 있다. 본 연구에서는 rf magnetron sputter 방법으로 박막 증착 시에 인가하는 rf power가 박막의 표면 특성에 어떠한 영향을 미치는지 nano-indenter를 사용해 surface hardness와 elastic modulus의 변화를 중심으로 알아보았다. 시료는 rf magnetron sputter로 증착 시 인가하는 plasma power를 60W와 80W로 달리하여 증착하였다. 증착가스는 Ar과 $N_2$를 조절하여 사용하였고 총 유량을 40 sccm 으로 고정하였으며, 이 때 압력은 3mTorr로 유지하였다. 실험결과 plasma power를 80W로 인가하여 증착한 시료의 surface hardness (18.48 GPa)가 60W로 증착한 시료의 surface hardness (12.03 GPa)보다 큰 값을 나타내었다. 이와 마찬가지로 80W로 증착한 시료의 elastic modulus(187.16 GPa)도 60W로 증착한 시료의 탄성계수 (141.15 GPa)보다 큰 값을 나타내었다. 이는 증착 시 인가하는 plasma power의 크기가 증가하면 박막표면에 compressive stress가 생성되어 박막의 surface hardness와 elastic modulus가 상대적으로 높게 측정되는 것으로 생각된다.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.