• Korean Journal of Materials Research
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• v.20 no.1
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• pp.25-30
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• 2010

Si nanowire/multiwalled carbon nanotube nanocomposite arrays were synthesized. Vertically aligned Si nanowire arrays were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type wafers using $HF/AgNO_3$ solution. The composite structure was synthesized by formation of a sheath of carbon multilayers on a Si nanowire template surface through a thermal CVD process under various conditions. The results of Raman spectroscopy, scanning electron microscopy, and high resolution transmission electron microcopy demonstrate that the obtained nanocomposite has a Si nanowire core/carbon nanotube shell structure. The remarkable feature of the proposed method is that the vertically aligned Si nanowire was encapsulated with a multiwalled carbon nanotube without metal catalysts, which is important for nanodevice fabrication. It can be expected that the introduction of Si nanowires into multiwalled carbon nanotubes may significantly alter their electronic and mechanical properties, and may even result in some unexpected material properties. The proposed method possesses great potential for fabricating other semiconductor/CNT nanocomposites.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.402.2-402.2
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• 2016

In photoelectrochemical (PEC) water splitting, Cu2ZnSnS4 (CZTS) compound has attracted intense attention as a photocathode due to not only large optical absorption coefficient, but also earth-abundance of constituent elements and suitable band alignment. With rapid development of nanotechnology, one-dimensional nanostructures of CZTS have been investigated as a potential form to achieve high efficiency because the nanostructures are expected to be capable of capturing more light and enhancing charge separation and transport. Here, we report a well-controlled fabrication route for vertically-aligned CZTS nanorod arrays on anodic aluminium oxide (AAO) template via simple sol-gel process followed by deposition of ZnS or CdS buffer layers on the CZTS nanorod to enhance charge separation. The structure, morphology, composition, optical absorption, and PEC properties of the resulting CZTS nanorod samples were characterized using X-ray diffraction, Raman spectroscopy, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectroscopy.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.773-776
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• 2007

A microstructure array has been proposed for micro plasma generation using electroplating and double exposed process. A stable atmospheric plasma has been generated at a low voltage by utilizing the micro electrode gap. Self-aligned microstructure can provide uniform electrode overlap with precisely controlled gap between the electrodes. The proposed structure allows for triode operation, which can expand the generated plasma over a large area by applying a lateral electric field. Electrical characteristics of the micro triode confirm the large numbers of the plasma ions are drifted to the secondary cathode by the lateral electrical field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.845-849
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• 2001

The new phto-alignment material PMI5CA, poly{N-(phenyl)maleimide-co-3-[4-(pentyloxy) cinamate]porpyl-2-hydroxy-1-methacrylate}, was synthesized and the electro-optical (EO)characteristics in the vertical-aligned(VA) liquid crystal display (LCD) photo-aligned on the photopolymer surface were studied. Excellent Voltage-transmittance(V-T) characteristics in the VA-LCD photoaligned with polarized UV exposure of oblique direction on the pohotopolymer surface for 1 min can be achieve. The transmittance of the VA-LCD photoaligned on the photopolymer surface decreased with increasing UV exposure time. We suggest that decrease of transmittance in the VA-LCD photoaligned on the photopolymer surface is attributed to the dissociation of the ester linkage in the photodimerized cinnamate structure with increasing UV exposure time.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.743-746
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• 2006

We have demonstrated a transflective liquid crystal display (LCD) with a single cell gap in a patterned vertically aligned mode. In our configuration, the different electrode structure in a transmissive and a reflective part was suggested to compensate an optical path difference of each region. As the result, the similar electro-optic characteristic of each region was obtained which results in an enhanced performance of the device. Moreover, suggested technique can be highly effective to realize the practical transflective LCD due to the simple fabrication process.

• Carbon letters
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• v.3 no.1
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• pp.25-32
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• 2002

Aligned multi-wall carbon nanotubes (MWNTs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. In this study, we investigated the influence of reaction parameters such as gas flow rate, ferrocene-xylene ratio and partial pressure, and reaction time on the yield and structure of vertically aligned carbon nanotubes produced by the floating catalyst method. The MWNTs produced had diameters in the range of 20~l00 nm, length around $100{\mu}m$ and bulk density about $0.51g/cm^3$ at a pressure of l0000 psi. It was possible to produce MWNTs with much faster growth rate of $12{\mu}m/min$ than that reported previously by the increase of ferrocene-xylene partial pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.146-149
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• 2004

We have studied a liquid crystal (LC) mode (named locked super homeotropic (LSH)) in which the LCs aligned homeotropically are locked by surrounding walls such as cubic, hexagonal and cylinder. In the device, the vertically aligned LCs tilt down symmetrically around the center of the cell when a voltage is applied and thus it exhibits wide viewing angle. The structure of this LSH mode is suitable for large-sized display panels. since the LCs are locked in micro domains the LCs do not flow to the bottom of the panel by gravity. This mode is applicable to achieve high performance TFT-LCD TV because of high performance characteristics such as high contrast, high brightness, wide-viewing angle.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.43-51
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• 2006

80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.