• Journal of Sensor Science and Technology
• /
• v.18 no.3
• /
• pp.239-244
• /
• 2009

We fabricated nano-templates by low temperature BCP(block copolymer) process at 180 $^{\circ}C$, then we deposited 10 nm-thick $TiO_2$ layers with ALD(atomic layer deposition) at low temperature of 150 $^{\circ}C$. Through FE-SEM analysis, we confirmed the successful formation of the groove-type(width of crest : 30 nm, width of trough : 18 nm) and the cylinder-type(diameter : 10 nm, distance between hole : 25 nm) templates. Moreover, after $TiO_2$-ALD processing, we confirmed the deposition of the uniform nano layers of $TiO_2$ on the nano-templates. Through AFM analysis, the pitches of the crest-through(in groove-type) and hole-hole(in cylinder-type) were the same before and after $TiO_2$-ALD processing. In addition, we indirectly determined the existence of the uniform $TiO_2$ layers on nano-templates as the surface roughness decreased drastically. We successfully fabricated nano-template at low temperature and confirmed that the three-dimensional nano-structure for sensor application could be achieved by $TiO_2$-ALD processing at extremely low temperature of 150 $^{\circ}C$.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.5
• /
• pp.339-344
• /
• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Korean Journal of Materials Research
• /
• v.18 no.10
• /
• pp.515-520
• /
• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

• Journal of the Korean Institute of Gas
• /
• v.26 no.5
• /
• pp.22-27
• /
• 2022

Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH₃ (Ammonia). NH₃ has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH₃ (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.1
• /
• pp.92-96
• /
• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• The korean journal of orthodontics
• /
• v.27 no.3 s.62
• /
• pp.457-471
• /
• 1997

The Purpose of this study was to estimate relative importance among the causative factors o( arch length discrepancy(ALD) and Possibility of prediction of the ALD in the mixed dentition. The sample consisted of the casts of the 142 young adults who had no abnormal muscle function, no skeletal abnormalities and Class I molar relationship. We classified the sample by gender and the extent of ALD, and measured mesiodistal diameters of each tooth and the dimensions of the dental arch. The computerized statistical analyses was carried out with SPSS win program. The results were as follows ; 1. Most of the variables of spacing group and some variables of dental arch dimension of crowding group were significantly different between genders. But in normal group, there were few differences. 2. In male crowding and female spacing group, mainly measurements of tooth dimension were significantly different from those of normal group. 3. In male spacing and female crowding group, measurements of dental arch dimension were significantly different from those of normal group. 4. The measurements of dimension of dental arch were highly correlated with ALD in correlation analysis and factor analysis. 5. Prediction equations for adult's ALDs by means of what can be measured in the mixed dentition(mesiodistal dimensions of incisors and first molar, intermolar width and arch length) showed R square from $63\%$ to $80\%$.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.7-12
• /
• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Journal of The Korean Society of Inherited Metabolic disease
• /
• v.12 no.1
• /
• pp.49-53
• /
• 2012

X-linked adrenoleukodystrophy (ALD) is a rare inherited metabolic disease which results in impaired peroxisomal ${\beta}$-oxidation and the accumulation of very long chain fatty acids (VLCFA) in the adrenal cortex, the myelin of the central nervous system, and the testes. X-linked ALD is caused by mutations in the ABCD1 gene encoding an ATP-binding cassette transporter superfamily located in the peroxisomal membrane. This disease is characterized by a variety of phenotypes. The classic childhood cerebral ALD is a rapidly progressive demyelinating condition affecting the cerebral white matter before the age of 10 years in boys. We report the case of a 8-year-old with childhood cerebral X-linked ALD who developed inattention, hyperactivity, motor incoordination and hemiparesis. We diagnosed ALD with elevated plasma very long chain fatty acid level and diffuse high signal intensity lesions in both parieto-occipital white matter and cerebellar white matter in brain MRI. We identified a novel c.983delT (p.Met329CysfsX7) mutation of the ABCD1 gene. There is no correlation between X-ALD phenotype and mutations in the ABCD1 gene. Further studies for searching additional non-genetic factor which determine the phenotypic variation will be needed.

• Journal of the Korean Vacuum Society
• /
• v.18 no.4
• /
• pp.296-301
• /
• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.41-41
• /
• 2009

We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a $SiO_2/p-Si$ substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of > 7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in the good TFT behavior with an onloff current ratio of > $10^6$ and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance or no saturation. The ALD grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen.