• Korean Journal of Materials Research
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• v.12 no.4
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• pp.235-239
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• 2002

In this study mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that, a third electrode, a mesh, is inserted between the powered and the ground electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied bias. Applied DC-bia s enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.325-325
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• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1619-1622
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• 2005

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.419-427
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• 2000

We propose a method to obtain various diffusion parameters of deposited atom. By comparing the results of kinetic Mote Carlo (KMC) simulation with the results of STM, HRLEED experiments, we can determine diffusion parameters including the hopping barrier of an adatom on terrace, detachment barrier at the step edge, and well known Schwoebel barrier. It is found that the branch-width, island density, and roughness were suitable atomic scale structure parameters for comparing simulation calculation with experimental results, and especially, it is found that the parameter branch-width which is not widely used in thin film growth study, plays an important role in determining diffusion barriers.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.73-79
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• 1991

Recent studies son surface coatings have shown that the change of physical, chemical and crystallographic structure analysed and observed according to the deposition process variables has the effects on the resultant film properties. Under the same preparation condition conditions of the substrate and process variables, physical morphology variations characterized by substrate temperature and bias which offect the surface mobility of adatom and adhesion variations related to the formation of Ti interlayer were considered in the present study. Microhardness showed the highest value around 40$0^{\circ}C$ of the substrate temperature and increased with the substrate bias. Adhesion was improved with the increase of substrate temperature and bias. An interlayer of pure titanium formed prior to deposition of TiN improves the adhesion at its optimum thickness. These results were explained by the change of physical morphology and phase analysis.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.547-550
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• 2004

We present a multiscale scheme which describes the dynamic pictures of atoms in the multiple length-scale systems. Large-scale atomic systems are reduced to coarse grained system by the quasicontinuum, of which the dynamic pathways are rendered by the action-derived molecular dynamics proved effective for multiple time-scale problems such as rare events. Adatom diffusions on the metal (001) surface are selected for our numerical examples. The energy barriers of the diffusions and the real dynamic trajectories of the adatoms are calculated.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.176-176
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• 1999

Si(113) 표면은 상온에서 3x2 주기성을 가지고 재배열되며 기판온도 (약 800K) 및 이종물질의 흡착에 의해서 3x1으로 상전이 되는 것으로 알려져 있다. 현재까지 3x2 표면의 구조 및 3x1으로의 상전이에 대해서 여러 가지 모형이 제안되어 왔으나 3x2 표면의 자세한 구조 및 상전이 메카니즘은 밝혀져 있지 않다. 본 연구에서는 low energy electron diffraction (LEED), photoemission spectroscopy (PES)를 이용하여 재배열된 표면의 구조,상전이, 그리고 에너지안정화 메카니즘에 대하여 조사하였다. 연구결과 Si(113) 표면상의 tetramer가 표면에너지를 감소시키기 위하여 relax되며 결과적으로 tetramerso에 전하 이동이 존재하는 것으로 생각된다. 그리고, 약 800K에서 일어나는 상전이는 기존에 보고된 것과는 달리 order-disorder 전이임을 알 수 있었다. 물질의종류 및 기판온도(150-800K)에 관계없이 이종물질의 흡착이 3x1으로의 상전이를 야기시킨다는 사실이 관측되었고 이는 현재 널리 받아들여지고 있는 adatom-dimer-interstitial 모형이 적절하지 않음을 보여준다. LEED 및 PES 결과를 바탕으로 기판온도 및 이종물질의 흡착에 의해 형성되는 상전이를 잘 설명할 수 있는 3x2 표면에 대한 가능한 구조모형을 제안하고자 한다.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1527-1533
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• 2011

The reaction of gas-phase atomic hydrogen with oxygen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. We have calculated the probability of the OH formation and energy deposit of the reaction exothermicity in the newly formed OH in the gas-surface reaction H(g) + O(ad)/Si${\rightarrow}$ OH(g) + Si. All reactive events occur in a single impact collision on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability is dependent upon the gas temperature and shows the maximum near 1000 K, but it is essentially independent of the surface temperature. The reaction probability is also independent upon the initial excitation of the O-Si vibration. The reaction energy available for the product state is carried away by the desorbing OH in its translational and vibrational motions. When the initial excitation of the O-Si vibration increases, translational and vibrational energies of OH rise accordingly, while the energy shared by rotational motion varies only slightly. Flow of energy between the reaction zone and the solid has been incorporated in trajectory calculations, but the amount of energy propagated into the solid is only a few percent of the available energy released in the OH formation.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.