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http://dx.doi.org/10.3740/MRSK.2002.12.4.235

The Properties of Low Hydrogen Content α-Si Thin Film Using DC-bias Enhanced or Addition of H2Gas in Mesh-type PECVD System  

Ryu, Se-Won (Hongik University)
Gwon, Do-Hyeon (Hongik University)
Park, Seong-Gye (Hongik University)
Nam, Seung-Ui (Hongik University)
Kim, Hyeong-Jun (Hongik University)
Publication Information
Korean Journal of Materials Research / v.12, no.4, 2002 , pp. 235-239 More about this Journal
Abstract
In this study mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that, a third electrode, a mesh, is inserted between the powered and the ground electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied bias. Applied DC-bia s enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom.
Keywords
PECVD; DC-bias; Low-Hydrogen; Desorption;
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