• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.29-35
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• 2004

암모니아 펄스플라즈마를 이용하여 $WF_6$ 가스와 $NH_3$ 가스를 교대로 흘려줌으로써 Si 기판위에 질화텅스텐 확산방지막을 증착하였다. $WF_6$ 가스는 Si과 반응하여 표면침식이 과도히 발생하였으나 암모니아 ($NH_3$)가스를 펄스 플라즈마를 인가하여 $WF_6$와 같이 사용하면 Si 표면을 질화처리 함으로써 표면침식을 막아주며 질화텅스텐 박막을 쉽게 증착할 수 있었다. 그 이유는 암모니아 가스의 분해를 통한 Si 기판의 흡착을 용이하게 하여 질화텅스텐 박막 증착이 가능하기 때문이다. 이러한 증착 미케니즘과 암모니아 펄스 플라즈마 효과에 대하여 조사하였다.

• Journal of the Optical Society of Korea
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• 제13권4호
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• pp.434-438
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• 2009

In this paper, a 12.5-Gb/s optical transmitter is implemented using 0.13-${\mu}m$ CMOS technology. The optical transmitter that we constructed compensates temperature effects of VCSEL (Vertical cavity surface emitting laser) using auto-power control (APC) and auto-modulation control (AMC). An external monitoring photodiode (MPD) detects optical power and modulation. The proposed APC and AMC demonstrate 5$\sim$20-mA of bias-current control and 5$\sim$20-mA of modulation-current control, respectively. To enhance the bandwidth of the optical transmitter, an active feedback amplifier with negative capacitance compensation is exploited. The whole chip consumes only 140.4-mW of DC power at a single 1.8-V supply under the maximum modulation and bias currents, and occupies the area of 1280-${\mu}m$ by 330-${\mu}m$ excluding bonding pads.

• 마이크로전자및패키징학회지
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• 제27권2호
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• pp.1-10
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• 2020

The technology and market size of image sensors continue to develop thanks to the release of image sensors that exceed 100 million pixels in 2019 and expansion of black box camera markets for vehicles in addition to existing mobile applications. We review the technology flow of image sensors that have been constantly evolving for 40 years since Hitachi launched a 200,000-pixel image sensor in 1979. Although CCD has made inroads into image sensor market for a while based on good picture quality, CMOS image sensor (CIS) with active pixels has made inroads into the market as semiconductor technology continues to develop, since the electrons generated by the incident light are converted to the electric signals in the pixel, and the power consumption is low. CIS image sensors with superior characteristics such as high resolution, high sensitivity, low power consumption, low noise and vivid color continue to be released as the new technologies are incorporated. At present, new types of structures such as Backside Illumination and Isolation Cell have been adopted, with better sensitivity and high S/N ratio. In the future, new photoconductive materials are expected to be adopted as a light absorption part in place of the pn junction.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.305-308
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• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• 한국식품저장유통학회지
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• 제12권4호
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• pp.323-328
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• 2005

천연 항균성 peptide인 polylysine을 이용한 항균성 포장재의 개발을 위한 기초자료를 얻기 위하여 polyamide 수지를 기반으로 하는 제조조건을 검토하고 두부를 대상식품으로 하여 병원성 및 부패 관련 미생물에 대한 항균활성을 확인하였다. Polylysine 제조조건에 있어서는 polylysine, polyamide의 농도와 코팅필름의 두께에 따라 항균활성에 큰 차이를 보였으나, $1.0\%$ 이상의 polylysine, $40\%$ polyamide, $50\;{\mu}m$ 이상의 필름 두께로 제조한 필름에 상대적으로 가장 높은 항균활성을 나타내었다. Polylysine의 용출량은 코팅된 필름을 멸균수에서 7일간 침지시킨 결과 침지 3일 까지 최대 약 $20\;{\mu}g/mL$의 농도를 나타낸 후 평형에 도달하였다. 코팅 필름의 항균활성은 초기 생균수 $4.8{\times}10^5\;CFU/mL$인 B. cereus에 대해 대조구에 비해 침지 7일 후 최대 105 CFU/mL수준의 감균효과를, 그리고 초기 생균수 $6.8{\times}10^5\;CFU/mL$인 K. pneumoniae에 대해서는 대조구에 비해 침지 7일 후 최대 $10^2\;CFU/mL$ 수준의 감균효과를 나타내어 polylysine 코팅 필름의 항균성 포장재로서의 활용 가능성을 확인 할 수 있었으며 polylysine 코팅 필름을 상업적으로 적용하기 위해서는 저농도의 두꺼운 필름보다는 고농도의 얇은 필름이 미생물의 증식을 저해하는데 효과적이라고 판단된다. 또한 필름으로부터 polylysine 용출을 용이하도록 하기 위한 연구가 추가로 연구되어야 하겠다.

• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.31-36
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• 2000

RF(radio Frequency)용 MCM(Multichip Module)-D 기판 내장형 인덕터를 개발하였다. MCM 기술은 고밀도 패키징 기술로서 주로 디지털회로에 많이 적용되어 왔으나, 최근에는 아날로그회로 및 디지털회로가 혼재된 혼성신호 및 초고주파 회로에도 적용되고 있다. 혼성신호에서는 능동소자 주변에 많은 수의 수동소자가 연결되므로 MCM-D 기판에 수동소자를 내장시키면 원가절감과 시스템의 크기 축소 및 경량화를 이를 수 있을 뿐 아니라, 성능과 신뢰성을 향상시킬 수 있다. 본 논문에서 MCM-D 기판은 Cu/감광성 BCB(Benzocyclobutene)를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/Cu를 각각 1000 $\AA$/3000 $\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 $\mu\textrm{m}$ Cu를 형성하였으며, 인덕터는 coplanar구조로 하여 기존의 반도체 공정을 이용하여 MCM-D기판에 인덕터를 안정적으로 내장시키고 전기적 특성을 측정하였다.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.47-53
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• 2012

최근 정보전송량이 증대됨에 따라 PCB는 고속 정보전송 및 박형화가 요구되고 있다. 하지만 기존의 전기적 PCB는 EMI, 실장밀도 등의 문제로 고속전송에 한계가 있어 기존의 전기 회로층에 광 회로층을 접목한 광 PCB가 그 해결책으로 대두되고 있다. 광 PCB 구현에서 가장 중요한 요소는 광 접속기술로 고효율, 수동정렬에 관한 연구가 활발히 이루어지고 있다. 따라서 본 논문에서는 광도파로에 렌즈를 일체형으로 제작하고 이를 보호하는 구조물을 정렬키로 사용한 장착형 광도파로 구조를 제안하였고, 광 및 구조 시뮬레이션을 통해 제안한 구조의 접속효율 및 구조적 안정성을 해석하였다. 광 시뮬레이션 결과 제안된 구조는 렌즈가 없는 구조와 비교해 송신부에서 약 1.86배, 수신부에서 약 1.42배의 높은 접속효율을 가지며, 구조 해석에서는 탈착과정에서 내부의 렌즈에 응력 및 변형이 발생하지 않음을 확인하였다. 따라서 본 논문에서 제안된 구조가 높은 접속효율을 가지고, 구조적 안정성을 가짐을 보였다.