• Archives of Pharmacal Research
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• v.21 no.3
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• pp.260-265
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• 1998

Angiogenic activity of Aloe vera gel was investigated by in vitro assay. We obtained the most active fraction from dichloromethane extract of Aloe vera gel by partitioning between hexane and 90% aqueous methanol. The most active fraction (F3) increased the proliferation of calf pulmonary artery endothelial (CPAE) cells. In addition, F3 fraction induced CPAE cells to invade type I collagen gel and form capillary-like tube through in vitro angiogenesis assay, and increased the invasion of CPAE cells into matrigel through in vitro invasion assay. Furthermore, the effect on the MRNA expression of proteolytic enzymes which are key participants in the regulation of extracellular matrix degradation was investigated by northern blot analysis. F3 fraction enhanced mRNA expression of urokinase-type plasminogen activator (u-PA), matrix metalloproteinase-2 (MMP-2), and membrane-type MMP (MT-MMP) in CPAE cells whereas the expression of plasminogen activator inhibitory (PAl-1) mRNA was not changed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.923-926
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• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.153-156
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• 2004

A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

• Journal of Pharmaceutical Investigation
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• v.18 no.2
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• pp.69-81
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• 1988

We studied on the synthesis of chloromethylated polystyrene as a precursor of optically active polymers for direct resolution of optical isomers. Changing the degree of crosslinking and the kind of crosslinking agents, several polystyrene resin matrices were synthesized. The matrices were chloromethylated with methylal and chlorosulfonic acid as chloromethylating agents. The effects of solvents of various dielectric constants on the chloromethylation were quantitavely examined. We also synthesized chloromethylated polystyrene of macroreticular type that retained large surface area and good physical stability. The differences between the macroreticular type and macroporous type were investigated.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.189-192
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• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1631-1633
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• 2008

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.466-469
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• 2006

We have developed the world's thinnest flexible electrophoretic displays (EPDs). The thin-film displays are 95 ..m thick, which is nearly the same thickness as a standard sheet of paper. Weighing 0.44g including external connection cables, these displays are also probably the world's lightest. We have also developed 7.1-inch-diagonal(paperback-sized) high-resolution flexible EPDs. The displays are large enough to be used as practical e-paper. More than 7 million transistors work correctly on plastic, enabling us to see 3-megapixel images. These flexible displays include active-matrix TFT devices that are fabricated using Suftla transfer technology. Suftla technology demonstrates the potential to achieve thin, flexible displays that will be used as an e-paper in the near future.