• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Journal of Veterinary Science
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• v.23 no.2
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• pp.24.1-24.10
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• 2022

Background: Small interfering RNA technology has been considered a prospective alternative antiviral treatment using gene silencing against influenza viruses with high mutations rates. On the other hand, there are no reports on its effectiveness against the highly pathogenic avian influenza H5N1 virus isolated from Indonesia. Objectives: The main objective of this study was to improve the siRNA design based on the nucleoprotein gene (siRNA-NP) for the Indonesian H5N1 virus. Methods: The effectiveness of these siRNA-NPs (NP672, NP1433, and NP1469) was analyzed in vitro in Marbin-Darby canine kidney cells. Results: The siRNA-NP672 caused the largest decrease in viral production and gene expression at 24, 48, and 72 h post-infection compared to the other siRNA-NPs. Moreover, three serial passages of the H5N1 virus in the presence of siRNA-NP672 did not induce any mutations within the nucleoprotein gene. Conclusions: These findings suggest that siRNA-NP672 can provide better protection against the Indonesian strain of the H5N1 virus.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.578-588
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• 1997

Poly-$Si_{1-x}Ge_x$ films on oxidized Si wafer were prepared by rapid thermal chemical vapor deposition using the $SiH_4$ and $GeH_4$ gaseous mixture at various deposition conditions. The deposition temperature, $SiH_4\;: GeH_4$ flow ratio and pressure were varied from 400 to $600^{\circ}C$, 1 : 0.1-2 : 1 and 1 to 50 torr, respectively. In this work, we have investigated the change of Ge composition of poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters and the effect of Ge composition on the deposition rate. From the experimental results, it was observed that the deposition rate increased with increasing deposition temperature and Ge composition. On the other hand, the Ge composition decreased with increasing temperature. As the deposition pressure increased, the deposition rate and Ge composition were increased linearly to 10 torr but increased slowly above it, which has been attributed to the slower rate of surface reaction than mass transfer.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.345-346
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• 1996

The contrasting values of the oscillator strengths for the (0,0) band of SiH+ molecules for the $A\;^1II-X\;^1{\sum}+$ transition reported in literature, motivated us to reinvestigate the same with the help of a new set of well accepted solar photospheric models, elemental abundances and dissociation energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• Korean Journal of Crystallography
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• v.18 no.1_2
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• pp.1-6
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• 2007

An Organometallic compound, $C_{16}H_{35}B_{10}IrS_2Si$, was synthesized from o-carborane, $Cp^*Ir(S_2C_2B{10}H_{10})$, and $Me_3SiCHN_2$. The molecular structure of this complex has been determined by X-ray diffraction. Crystallographic data : monoclinic, space group $P2_1/n$, $a=10.1986(12)\;{\AA}$, $b=14.834(5)\;{\AA}$, $c=17.139\;{\AA}$, ${\beta}=92.24(2)^{\circ}$, Z=4, $V=2591.0(14)\;{\AA}^3$. The structure was solved by direct methods and refined by full-matrix leat-squares methods to give a model with a reliability factor R=0.053 for 5080 reflections.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.28-32
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• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1686-1690
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• 1989

Using the anisotropic etching characteristics of N2H4-H2O solutions, Si diaphragm was fabricated for the integrated sensors. The optimal composition and temperature of the etching solution in (100) Si etching process was established to be 50mol% N2H4 in H2O at 105\ulcorner\ulcorner for both higher etch rate (=2.6\ulcorner/min) and better surface quality of etched (100) planes. Based on the above optimal etching condition, the electrochemical etch-stop technique was employed to form n-type Si diaphragm having a thickness of 20\ulcorner and the thickness of diapragm could exactly be controlled to 20\ulcorner\ulcorner.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.162-163
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• 2007

The dry etching of Si was investigated using direct dc biasing to the Si substrate. The TCP type etching system with a feed-through for applying a dc bias was used in the etching. The applied dc bias and ICP power was varied to examine the effect on the etching at the fixed chamber pressure and $SF_6$ flow rate of 10 mTorr and 10 sccm during. When the plasma was generated at ICP power of 100 W, the etch rate of Si was increased with the bias for the biased samples. However, the etching of Si for the non-biased sample was enhanced for the increased ICP power.