Establishment of Optimal {100} Si Etching Condition for $N_2H_4-H_2O$ Solutions and Application to Electrochemica Etching

$N_2H_4-H_2O$용액의 {100} Si에 대한 최적식각조건의 설정과 전기화학적 식각에의 응용

Using the anisotropic etching characteristics of N2H4-H2O solutions, Si diaphragm was fabricated for the integrated sensors. The optimal composition and temperature of the etching solution in (100) Si etching process was established to be 50mol% N2H4 in H2O at 105\ulcorner\ulcorner for both higher etch rate (=2.6\ulcorner/min) and better surface quality of etched (100) planes. Based on the above optimal etching condition, the electrochemical etch-stop technique was employed to form n-type Si diaphragm having a thickness of 20\ulcorner and the thickness of diapragm could exactly be controlled to 20\ulcorner\ulcorner.