Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical Properties of Boron and Phosphorus Doped μc-Si:H Films using Inductively Coupled Plasma Chemical Vapor Deposition Method for Solar Cell Applications

  • Jeong, Chae-Hwan (Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology) ;
  • Jeon, Min-Sung (Department of Electrical and Information Engineering, Tokyo University of Agricultural and Technology) ;
  • Koichi, Kamisako (Department of Electrical and Information Engineering, Tokyo University of Agricultural and Technology)
  • Published : 2008.02.29
Download PDF
⟨ Previous Next ⟩

Abstract

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

Keywords

References

  1. S. Nishida, H. Tasaki, M. Konagai, and K. Takahashi, "Highly conductive and wide bandgap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor deposition", J. Appl. Phys., Vol. 58, No. 2, p. 1427, 1985 https://doi.org/10.1063/1.336071
  2. K. Prasad, U. Kroll, F. Finger, A. Shah, J. L. Dourer, A. Howling, J. Baumann, and M. Schubert, "In amorphous silicon technology", Mater. Res. Soc. Proc., Vol. 219, p. 469, 1991
  3. C. Wang and G. Lucovski, "Intrinsic microcrystalline silicon deposited by remote PECVD: A new thin-fim photovoltaic material", Proc. 21st IEEE Photovoltaic Specialist Conference, p. 614, 1990
  4. J. Meier, R. Fluckigar, H. Keppner, and A. Shah, "Complete microcrystalline p-i-n solar cell-crystalline or amorphous cell behavior?", Appl. Phys. Lett., Vol. 65, No. 7, p. 860, 1994 https://doi.org/10.1063/1.112183
  5. R. Fluckiger, J. Meier, H. Keppner, M. Gotz, and A. Shah, "Preparation of undoped and doped microcrystalline silicon by VHF-GD for p-i-n solar cell", Proc. 23rd IEEE Photovoltaic Specialist Conference, p. 839, 1993
  6. K. Yamamoto, M. Yoshimi, Y. Tawada, K. Okamoto, A. Nakajima, and S. Igari, "Thin-film poly-Si solar cells on glass substrate fabricated at low temperature", Appl. Phys. A, Vol. 69, p. 179, 1999 https://doi.org/10.1007/s003390050988
  7. Z. Iqbal and S. Veprek, "Raman scattering from hydrogenated microcrystalline and amorphous silicon", J. Phys. C, Vol. 15, No. 2, p. 377, 1982 https://doi.org/10.1088/0022-3719/15/2/019
  8. A. Matsuda and K. Tanaka, " Guiding principle for preparing highly photosensitive Si-based amorphous alloys", J. Non-Cryst. Solids, Vol. 97-98, p. 1367, 1987 https://doi.org/10.1016/0022-3093(87)90328-0
  9. T. Akasaka and I. Shimizu, "In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique", Appl. Phys. Lett., Vol. 66, No. 25, p. 3441, 1995 https://doi.org/10.1063/1.113381
  10. J. Poortmans and V. Arkhipov (eds.), Thin Fim Solar Cells: Fabrication, Characterization and Applications, Wiley, Chichester, p. 183, 2006
  11. R. Street, Hydrogenated Amorphous Silicon, Cambridge University press, Cambridge, 1991
  12. G. E. Jellison, Jr., V. I. Merkulov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, and J. B. Caughman, "Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry", Thin Solid Films, Vol. 377-378, p. 68, 2000 https://doi.org/10.1016/S0040-6090(00)01384-5

Cited by

  1. High rate performance of virus enabled 3D n-type Si anodes for lithium-ion batteries vol.56, pp.14, 2011, https://doi.org/10.1016/j.electacta.2011.03.037