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http://dx.doi.org/10.4313/TEEM.2008.9.1.028

Electrical Properties of Boron and Phosphorus Doped μc-Si:H Films using Inductively Coupled Plasma Chemical Vapor Deposition Method for Solar Cell Applications  

Jeong, Chae-Hwan (Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology)
Jeon, Min-Sung (Department of Electrical and Information Engineering, Tokyo University of Agricultural and Technology)
Koichi, Kamisako (Department of Electrical and Information Engineering, Tokyo University of Agricultural and Technology)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.1, 2008 , pp. 28-32 More about this Journal
Abstract
Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.
Keywords
ICP-CVD; Microcrystalline Si; Solar cell; Boron; Phosphorus; Conductivity;
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