• 한국재료학회지
• /
• 제29권11호
• /
• pp.715-719
• /
• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 한국재료학회지
• /
• 제28권9호
• /
• pp.528-533
• /
• 2018

In recent years, solar cells based on crystalline silicon(c-Si) have accounted for much of the photovoltaic industry. The recent studies have focused on fabricating c-Si solar modules with low cost and improved efficiency. Among many suggested methods, a photovoltaic module with a shingled structure that is connected to a small cut cell in series is a recent strong candidate for low-cost, high efficiency energy harvesting systems. The shingled structure increases the efficiency compared to the module with 6 inch full cells by minimizing optical and electrical losses. In this study, we propoese a new Conductive Paste (CP) to interconnect cells in a shingled module and compare it with the Electrical Conductive Adhesives (ECA) in the conventional module. Since the CP consists of a compound of tin and bismuth, the module is more economical than the module with ECA, which contains silver. Moreover, the melting point of CP is below $150^{\circ}C$, so the cells can be integrated with decreased thermal-mechanical stress. The output of the shingled PV module connected by CP is the same as that of the module with ECA. In addition, electroluminescence (EL) analysis indicates that the introduction of CP does not provoke additional cracks. Furthermore, the CP soldering connects cells without increasing ohmic losses. Thus, this study confirms that interconnection with CP can integrate cells with reduced cost in shingled c-Si PV modules.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1404_1405
• /
• 2009

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. $GeH_4$ is used in many applications with $Si_2H_6$ gas, such as amorphous alloy, a thin film of silicon and solar cell. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in $GeH_4$gas over the E/N range from 0.01 to 1000 Td by two-term approximation of the Boltzmann equation.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.30.1-30.1
• /
• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• 분석과학
• /
• 제24권2호
• /
• pp.105-112
• /
• 2011

태양전지용 박막 규소나 차세대 반도체용 박막트랜지스터의 원료로 사용 가능한 하이드로폴리실란의 합성과 물성 분석에 관한 연구이다. 이러한 하이드로폴리실란을 유기 치환기가 없는 사염화규소를 사용하여 합성한 것이 가장 큰 특징이며, 일반적으로 알칼리금속을 사용한 환원법으로 유기용매에 가용성인 하이드로폴리실란을 합성하는 최적 조건을 확립하고자 하였으며 하이드로폴리실란 용액은 그 물성을 여러 가지 분석 방법을 사용하여 조사하였으며 또한 열분해 실험을 통해 무정형 또는 다결정성 규소로 전환시킬 수 있음을 확인하였다.

• Korean Chemical Engineering Research
• /
• 제58권3호
• /
• pp.369-380
• /
• 2020

대부분의 단결정 실리콘 잉곳은 초크랄스키(Czochralski(Cz)) 공정으로 제조된다. 그러나 단결정 실리콘 잉곳을 제품화 및 태양 전지 기판으로 가공하였을 때 산소 불순물이 있는 경우 낮은 효율성을 나타내는 경향이 있다. 단결정 Si-잉곳의 생산을 위해서는 용융 Si를 녹인 다음 단결정 Si의 시드(Seed)로 결정화하는 초크랄스키(Cz) 공정을 도입한다. 용융된 다결정 Si-덩어리를 단결정 Si-잉곳으로 결정성장 될 때, 열 전달은 Cz-공정의 구조에서 중요한 역할을 한다. 본 연구에서 고품질 단결정 실리콘 잉곳을 얻기 위해 Cz-공정의 최적화된 설계를 구성하였다. 결정 성장 시뮬레이션로부터 결정성장을 위한 Pulling rate 및 Rotation speed에 최적의 변수값을 형성하기 위해 사용되었으며, 변형된 Cz-공정에 대한 연구 및 해당 결과가 논의되며 결정 성장 시뮬레이션을 사용하여 Cz-공정의 Pulling rate, Rotation speed 및 Melt charge level의 최적화된 설계로 인한 결정성장시 단결정 실리콘으로 유입되는 산소 농도 최소화를 설계하였다.

• 한국결정성장학회지
• /
• 제18권6호
• /
• pp.232-236
• /
• 2008

최근 실리콘 원료의 부족에 따른 가격상승으로 인하여 99.9999% 이상의 순도를 지닌 폴리 실리콘을 더 저렴하게 제조하기 위한 연구가 활발히 진행되고 있다. 본 연구에서는 순도 99%의 금속급 실리콘(MG-Si)을 원료로 산처리와 일방향 응고를 통해 고순도로 정제하는 연구를 수행하였다. MG-Si 럼프를 플레너터리 밀로 분쇄한 후 HCl/$HNO_3$/HF 산 수용액에서 처리하였다. 그 결과 Al, Fe, Ca, Mn 등과 같은 금속 불순물들의 실리콘 내 함량이 크게 감소하면서 실리콘의 순도는 99.995%까지 향상되었다. 정제된 실리콘 분말을 성형한 후 HEM로를 이용하여 용융시킨 뒤, 일방향 응고를 통하여 잉곳을 제조하였다. 성장시킨 다결정 실리콘 잉곳은 $0.3{\Omega}{\cdot}cm$의 비저항과 $3.8{\mu}{\cdot}sec$의 열 운반자 소멸시간(minority carrier life time)을 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제29권5호
• /
• pp.303-306
• /
• 2016

Floating PV system is installed on the water such as artificial lake, reservoir, river for the purposes of zero energy town and/or large scale of PV station. There are electrical gains from cooling effect by water and reflection of water surface. Particularly, floating PV power station with high efficiency solar cell modules receives a lot of attention recently. Floating PV system is installed on the water, which means grounding method to the frame of solar cell and electrical box such as connector band and distribution panelboard should be applied in different way from grounding method of PV system on land. The grounding resistance should be 10[${\Omega}$] in case the voltage is over 400[V] in accordance with Korean Standard. The applicable parameters are the resistivity of water in various circumstances, depth of water, and length of electrode in order to meet 10[${\Omega}$] of grounding resistance. We calculated appropriate length of the electrode on the basis of theoretical equation of grounding resistance and analyzed the relation between each parameters through MATLAB simulation. This paper explains grounding system of floating PV power station and presents considerations on grounding design according to the resistivity of water.

• 한국전기전자재료학회논문지
• /
• 제29권8호
• /
• pp.461-465
• /
• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1221_1222
• /
• 2009

다결정질 실리콘 웨이퍼의 도핑깊이, 도핑농도, 전면 재결합 속도, 면저항은 태양전지의 효율을 결정하는데 중요한 요소이다. 태양전지의 높은 효율을 얻기 위해 PC1D를 이용하여 태양전지의 에미터 도핑 깊이와 농도, 에미터 면저항, 전면 재결합 속도를 조절해 보았다. 그 결과로 최적화된 요소들은 peak doping $10^{18}cm^{-3}$, depth factor $0.5{\mu}m$, front recombination velocity $10^2cm/s$, sheet resistance $50{\Omega}/{\square}$를 얻을 수 있었다. 최적화 과정을 통하여 우리는 peak doping과 면저항이 높은 효율을 얻기 위한 중요한 요소가 된다는 사실을 알 수 있었다. 본 논문에서는 더 자세한 시뮬레이션 요소값과 그들이 태양전지에 미치는 영향에 대해 알아보고자 한다.