• 한국표면공학회지
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• 제32권6호
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• pp.686-694
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• 1999

Insoluble anodes of the Ta/Ir mixed metal oxide for electrodeposition of Ni-W alloy in ammoniacal citrate bath were prepared by thermal decomposition method. Ti plate was etched in boiling oxalic acid solution and coated with ethanol solution of $TaCl_{5}$ and $IrCl_4$ mixed in a fixed ratio, followed by drying and treating at various temperatures. The coating layer of these insoluble anode was characterized by SEM, EDX, XRD and DSC. The decomposition rate of citric acid in plating bath was determined by measuring the $CO_2$ gas evolved at the anodes with Gas Chromatography. Evolution of $CO_2$ gas from Ta/Ir oxide anodes decreased about 5% compared with that of Pt. The $CO_2$ gas evolution was increased with the amount of Ir-oxide in the coatings. The coatings which have more than 40% ratio of Ta content and heat-treated at the temperature higher than $400^{\circ}C$ showed better efficiency

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1472-1474
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• 1994

In this paper, $TiO_2-V_2O_5$ thin films are fabricated by Sol-Gel method and their humidity-sensing characteristics have been investigated. The microstructure of specimen is porous. The humidity-sensing characteristics of thin films are good according to increasing heat treatment temperature and decreasing measurement frequency.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.861-862
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• 2006

The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1078-1084
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• 2002

The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.214-215
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• 2002

High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.57-61
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• 1998

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.