• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• Bulletin of the Korean Chemical Society
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• 제26권11호
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• pp.1776-1782
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• 2005

ZnSe/ZnS, UV-blue luminescent core shell quantum dots, were synthesized via a thermal decomposition reaction of organometallic zinc and solvent coordinated Selenium (TOPSe) in a hot solvent mixture. The synthetic conditions of the core (ZnSe) and the shell (ZnS) were independently studied at various reaction temperature conditions. The obtained colloidal nanocrystals at corresponding temperatures were characterized for their optical properties by UV-vis, room temperature solution photoluminescence (PL) spectroscopy, and further obtained powders were characterized by XRD, TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the ZnSe core was 300 ${^{\circ}C}$, and for the optimum shell capping, the temperature was 135 ${^{\circ}C}$. At this temperature, solution PL spectrum showed a narrow emission peak at 427 nm with a PL efficiency of 15%. In addition, the measured particle sizes for the ZnSe/ZnS nanocomposite via TEM were in the range of 5 to 12 nm. Furthermore, we have synthesized water-soluble ZnSe/ZnS nanoparticles by capping the ZnSe/ZnS hydrophobic surface with mercaptoacetate (MAA) molecules. For the obtained aqueous colloidal solution, the UV-vis spectrum showed an absorption peak at 250 nm, and the solution PL emission spectrum showed a peak at 425 nm, which is similar to that for hydrophobic quantum dot ZnSe/ZnS. However, the calculated PL efficiency was relatively low (0.1%) due to the luminescence quenching by water and MAA molecules. The capping ligand was also characterized by FT-IR spectroscopy, with the carbonyl stretching peak in the mercaptoacetate molecule appearing at 1575 $cm ^{-1}$. Finally, the particle sizes of the MAA capped ZnSe/ZnS were measured by TEM, showing a range of 12 to 17 nm.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• 전자공학회논문지
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• 제51권8호
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• pp.167-171
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• 2014

평판 디스플레이(plate panel display)가 휴대용으로 발전하면서 박막화, 고색재현성, 고휘도에 관한 연구가 활발히 이루어지고 있으며, 광원으로써 LED, OLED가 주로 이용되고 있다. 이러한 광원의 소재로 양자점에 관한 연구가 많이 이루어 지고 있는데, 양자점은 고색재현성과 유연디스플레이 구현에 있어서 주목받는 차세대 반도체 나노형광체 이다. 본 연구에서는 평판 디스플레이를 구현함에 있어서 양자점을 이용하는 방법에 관하여 제시하였다. CdSe/ZnS 양자점을 PET베리어 필름에 $100{\mu}m$ 두께로 도포하고 455nm의 파장을 갖는 청색 LED를 광원으로하여 빛을 조사하는 디바이스를 제작하고 광특성을 평가하였으며, LCD의 색변환 필름으로써 양자점의 적용 가능성을 제시하였다.

• 한국분말재료학회지
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• 제31권3호
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• pp.226-235
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• 2024

InP quantum dots (QDs) have attracted researchers' interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/ shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

• Korean Chemical Engineering Research
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• 제59권3호
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• pp.450-454
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• 2021

현재, 감마 핵종 분석은 주로 무기섬광체 또는 반도체 검출기를 활용하여 여러 분야에 사용되고 있다. 이러한 검출기는 분해능이 좋지만 크기가 제한적이며, 가공성이 낮고 경제성이 플라스틱 섬광체보다 낮다. 따라서, 나노물질인 양자점과 플라스틱섬광체의 장점을 이용하여 양자점 나노물질 기반 플라스틱 섬광체를 개발하였다. 가장 많이 활용되고 있는 Cd계열 물질인 CdS/ZnS 양자점을 플라스틱 매트릭스에 교반하여 제작하였으며, 이를 ⁶⁰Co핵종 대상 계측 실험을 하여 상용플라스틱 섬광체의 성능과 비교 분석하였다. 상용플라스틱 섬광체 대비 CdS/ZnS 양자점 기반 플라스틱 섬광체가 20~30% 높은 효율을 보였다. 이는 의료분야뿐만 아니라 원자력 해체분야에서도 방사능 분석기로 활용 가능할 것으로 판단된다.

• 한국분말재료학회지
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• 제25권2호
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• pp.132-136
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• 2018

Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are $270^{\circ}C$, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.

• 한국수소및신에너지학회논문집
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• 제32권6호
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• pp.656-662
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• 2021

For the high efficiencies of quantum dot-sensitized solar cells (QDSCs), it is important to control the severe electron recombination at the interface of photoanode/electrolyte. In this work, we optimize the surface passivation process of ZnS/SiO₂ double overlayers for the enhanced photovoltaic performances of QDSCs. The overlayers of zinc sulfide (ZnS) and SiO₂ are coated on the surface of QD-sensitized photoanode by successive ionic layer adsorption and reaction (SILAR) method, and sol-gel reaction, respectively. In particular, for the sol-gel reaction of SiO₂, the influences of temperature of precursor solution are investigated. By application of SiO₂ overlayers on the ZnS-coated photoanode, the conversion efficiency of QDSCs is increased from 5.04% to 7.35%. The impedance analysis reveals that the electron recombination at the interface of photoanode/electrolyte is obviously reduced by the SiO₂ overlayers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.2-347.2
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• 2016

Recently, in order to improve the performance of the colloidal quantum dot solar cells (CQDSCs), various efforts such as the modification of the cell architecture and surface treatment for quantum dot (QD) passivation have been made. Especially, the incorporation of halides into the QD matrix was reported to improve the performances significantly via passivating QD trap states that lower the life-time of the minority-carrier. In this work, we fabricated a lead sulfide (PbS) QD bilayer treated with different ligands and utilized it as a photoactive layer of the CQDSCs. The bottom and top PbS layer was treated using metal iodide ($MI_x$ and butanedithiol (BuDT), respectively. All the depositions and ligand treatments were carried out in air using layer-by-layer spin-coating process. The fabrication of the active layers as well as the n-type zinc oxide (ZnO) layer was successfully carried out on the bendable indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) substrate, which implies that this technique can be applied to the fabrication of flexible and/or wearable solar cells. The power conversion efficiency (PCE) of the CQDSCs with the architecture of $PET/ITO/ZnO/PbS-MI_x/PbS-BuDT/MoO_x/Ag$ reached 4.2 %, which is significantly larger than that of the cells with single QD (PbS-BuDT) layer.