• 한국정보통신학회논문지
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• 제15권6호
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• pp.1349-1354
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• 2011

본 연구에서는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 커패시턴스-전압 특성을 조사하였다. CdS/CdTe 접합의 경우, 역방향 바이어스가 증가함에 따라 공핍층의 폭이 커져 커패시턴스 값이 약간 감소하였으나 CdZnS/CdTe 접합에서는 CdTe 박막 내에서의 공핍층 폭이 바이어스에 크게 영향을 받지 않아 커패시턴스 값이 역방향 바이어스에 따라 거의 변화가 없었다. 바이어스 전압을 인가하지 않은 상태에서의 공핍층 폭은 높은 CdZnS 박막의 비저항 및 낮은 캐리어 농도로 인해 CdS/CdTe 접합보다 CdZnS/CdTe 접합에서 보다 큰 값을 나타내었다. CdZnS/CdTe 태양전지의 개방전압은 Zn의 비율이 커짐에 따라 CdZnS 박막과 CdTe 박막의 전자 친화력 차이의 감소로 인하여 크게 증가하였으나, Zn 비율이 0.35 이상인 경우 오히려 감소함을 알 수 있었다. 또한 CdZnS 박막의 높은 비저항이 태양전지의 직렬저항을 상승시켜 전지의 변환 효율은 오히려 감소함을 알 수 있었다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 춘계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.44-44
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• 2004

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• 센서학회지
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• 제28권4호
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• pp.256-261
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• 2019

In this study, mid-infrared transparent zinc sulfide (ZnS) ceramics were fabricated through hydrothermal synthesis with different molar ratios of S/Zn (S/Zn = 0.8, 1.0, 1.2, 1.4, and 1.6). The ZnS ceramics were sintered at a relatively low temperature of $850^{\circ}C$ to prevent the occurrence of the hexagonal phase featuring optical anisotropy. The phase composition, microstructure, and optical properties of the ZnS ceramics were subsequently investigated by employing X-ray diffraction, scanning electron microscopy, and Fouriertransform infrared spectroscopy. The results obtained indicate that the ZnS nanoparticles feature the cubic phase, without the hexagonal phase. Moreover, with increasing S, the crystallinity and particle size of the ZnS nanoparticles increased. The crystallinity and density of the ZnS ceramics improved when the molar ratio of S was higher than the molar ratio of Zn, thereby enhancing the transmittance. Furthermore, the ZnS ceramic with an S/Zn value of 1.2 was found to exhibit the highest transmittance of approximately 69% owing to the reduced occurrence of the hexagonal phase and a high density of 99.8%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국환경보건학회지
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• 제20권1호
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• pp.62-67
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• 1994

ZnO-$Fe_2O_3$ 복합금속 산화물 흡착제가 황화수소 제거능이나 황화된 흡착제의 산화적 재생반응에 미치는 영향을 고찰하였다. Zinc ferrite 흡착제가 가장 높은 황화수소 제거능을 나타내었고 혼합한 $Fe_2O_3$ 흡착제는 황화반응 도중 H$_2$S의 생성을 촉진시킴을 알 수 있었다. 또한 황화반응의 결과로 생성되는 금속황화물들이 H$_2$S 열분해의 촉매로 작용하였으며 H$_2$는 $Fe_2O_3$의 함량이 증가할수록 더 많이 발생하였다. 산화적 재생반응의 결과로부터 ZnS를 제외하고 $Fe_2O_3$를 혼합한 흡착제는 모두 잘 재생됨을 알 수 있었다. 또한 산화적 재생반응 도중 생성될 수 있다고 보고된 zinc sulfate는 생성되지 않았다. 그리고 SO$_2$ 발생 곡선의 형태나 완전재생에 소요되는 시간을 기준으로 판단해 볼 때 $Fe_2O_3$의 혼합량의 변화는 산화적 재생반응에 별다른 영향을 미치지 않음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.399-399
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• 2011

We studied the structural and optical characterization of zinc sulfide (ZnS) thin films by RF magnetron sputtering on glass substrates. The substrate temperature was varied in the range of 100$^{\circ}C$ to 400$^{\circ}C$. The XRD analyses indicated that ZnS films had cubic structures with (111) preferential orientation and grain size varied from 20 to 60 nm, increasing with substrate temperatures. The optical properties were carried out by UV-visible spectrophotometer. Transmission measurement showed that the films had more than 70% transmittance in the wavelength larger than 400 nm, and the absorption edge shifted to shorter wavelength with the increase of substrate temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.424-425
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• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.