Etching characteristics of ZnS:Mn thin films using $BCl_3/Ar$ high density plasma

$BCl_3/Ar$ 고밀도 플라즈마를 이용한 ZnS:Mn 박막의 식각 특성

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.