• Title/Summary/Keyword: ZnO-$Nb_2$$O_5$

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Combinatorial Approach for Systematic Studies in the Development of Transparent Electrodes

  • Kim, Tae-Won;Kim, Sung-Dae;Heo, Gi-Seok;Lee, Jong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.28-28
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    • 2008
  • We have demonstrated the combinatorial synthesis of a variety of transparent conducting oxides using a combinatorial sputter system. The effects of a wide range of Nb or Zn doping rate on the optical and electrical properties of Indium-tin oxides (ITO) films were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates, using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and $Nb_2O_5$ or ITO and ZnO. We have examined the work-function, resistivity, and optical properties of the Nb or Zn-doped ITO films. Furthermore, the effects of Hz plasma treatment on the physical properties of Ga or Zn doped ITO films synthesized by combinatorial sputter system were investigated.

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Varistor Properties and Aging Behavior of V/Mn/Co/ La/Dy Co-doped Zinc Oxide Ceramics Modified with Various Additives

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.284-289
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    • 2014
  • The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

A study on the relationship of various characterizations for undoped ZnO thin films (Undoped ZnO 박막의 다양한 특성의 상관관계에 대한 연구)

  • Baek, Kyung-Hyun;Park, Hyeong-Sik;Jang, Kyung-Soo;Jung, Sung-Wook;Ryu, Kyung-Yul;Yun, Eui-Jung;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.147-147
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    • 2010
  • PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

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Fabrication and Characterization of Bi2O3-MgO-ZnO-Nb2O5 Thin Films by Pulsed Laser Deposition (펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석)

  • Bae, Ki-Ryeol;Lee, Dong-Wook;Elanchezhiyan, J.;Lee, Won-Jae;Bae, Yun-Mi;Shin, Byoung-Chul;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.211-215
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    • 2010
  • Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

A Study on the Sintering Characteristics of Ni-Zn Ferrites with Additives (첨가율에 의한 Ni-Zn 페라이트의 소결특성에 관한 연구)

  • 강재덕;문현욱;정병두;소대화
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1990.10a
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    • pp.71-77
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    • 1990
  • This paper is studied on the sintering characteristics of Ni-Zn ferrites. The specimen ferrites was composed of 20 mol% NiO, 30mol% ZnO, 50 mol% Fe$_2$O$_3$, and 0.0025 mol%, 0.005 mol%, 0.01 mol% Nb$_2$O$\_$5/, Bi$_2$O$_3$, V$_2$O$\_$5/, wee used as minor additives. Sintering was carried out at 1100$^{\circ}C$. As results from the experiments, the high value of initial permeability of 6X10$^2$∼9X10$^2$ can be achieved at 500KHz∼1000KHz. The value of loss factor 1X10 ̄$^2$∼2X10$^2$ can be achieved at 500KHz∼1000KHz. The lowest 1/(${\mu}$XQ) value was obtained in the specimen with the addition of 0.005mol% fracyion for V$_2$O$\_$5/.

Physical Properties of PNN-PMN-PZT Doped with Zinc Oxide and CLBO for Ultrasonic Transducer

  • Yoo, Juhyun;Kim, Tahee;Lee, Eunsup;Choi, Nak-Gu;Jeong, Hoy-Seung
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.334-337
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    • 2017
  • In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

Piezoelectric properties of Pb-free BNKT ceramics with ZnO addition (ZnO첨가에 따른 무연 BNKT계 세라믹스의 압전특성)

  • Ryu, Sung-Lim;Kim, Ju-Hyun;Lee, Mi-Young;Yoo, Ju-Hyun;Seo, Sang-Hyun;Chung, Kwang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.193-195
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    • 2005
  • [ $0.96[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%ZnO$ ], were studied in order to develope the superior piezoelectric properties of Lead-free piezoelectric ceramics. With increasing amount of ZnO addition, density showed the maximum value of 5.79(g/$cm^3$) at 0wt% ZnO addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 280 at 0.4wt% ZnO addition.

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Combinatorial studies on the work function characteristics for Nb or Zn doped indium-tin oxide electrodes

  • Heo, Gi-Seok;Kim, Sung-Dae;Park, Jong-Woon;Lee, Jong-Ho;Kim, Tae-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.159-159
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    • 2008
  • Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

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Sintering Effect on Clamping Characteristics and Pulse Aging Behavior of ESD-Sensitive V2O5/Mn3O4/Nb2O5 Codoped Zinc Oxide Varistors

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.308-311
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    • 2015
  • V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V2O5/Mn3O4/Nb2O5 codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E1 mA/cm2 = 27 (initial 39) after application of a pulse current of 100 A.