• 한국세라믹학회지
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• 제23권1호
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• 한국재료학회지
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• 제22권11호
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• 열처리공학회지
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• 제31권3호
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• 한국세라믹학회지
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• 제30권6호
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• pp.499-509
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• 1993

Structures of hematite(${\alpha}$-Fe2O3), Ba-ferrite(BaFe12O19) and Zn2Y(Ba2Zn2Fe12O22) were studied by powder X-ray diffraction(XRD) method. Powder XRD patterns of the ferrites were analyzed with the Rietveld method, and the final refined R-factors were RWP<0.01 and RI<0.03. The lattice parameters refined with hexagonal crystal system were a=5.0342${\AA}$, c=13.746${\AA}$ for hematite, a=5.8928${\AA}$, c=23.201${\AA}$ for Ba-ferrite, and a=5.8763${\AA}$, c=43.567${\AA}$ for Zn2Y. In the hematite, the oxygen parameter is 0.3072 and the Fe-O distances in FeO6octahedron are 1.941${\AA}$ and 2.118${\AA}$, close to the single crystal data of Blake et al.. In the Ba-ferrite, the Fe atom in oxygen trigonal bipyramid is displaced 0.155${\AA}$ away from the BaO3 mirror plane into 4e position. In the Zn2Y, 75% of Zn is located at the oxygen terahedral site in S-block.

• 한국세라믹학회지
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• 제16권2호
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• pp.89-98
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• 1979

In order to prepare ferroxplana ZnY $(Ba_2Zn_2Fe_{12}O_{22})$, which would be useful for GHz-band communication, the optimum coprecipitation condition of 1 $BaCl_{2-1} Zn(NO_3)_2-6FeCl_3$ in $NaOH-Na_2CO_3$ solution was investigated by use of a new apparatus invented in our laboratory. By freeze-drying and calcining the coprecitated hydroxide-carbonate, the very reactive powder was obtained, from which the synthesis process of ZnY and the other related crystals were investigated by means of X-ray diffraction. In results, it was found that the reactive powder containing ZnY as the major component can be prepared by this method, which may be used in manufacturing the various magnetic cores for the microwave communication.

• 한국분말재료학회지
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• 제9권6호
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• pp.449-454
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• 2002

$MnxZn_{1-x}Fe_2O_4$ (x=0.69~0.74) powders synthesized by the thermal decomposition of organic acid salts. The obtained powders were uniform in composition and ultra-fine particle with about 400 nm. The amount of spinel phase of these powders was about 50% in X-ray diffraction patterns. The calcination of powder was carried out at $900^{\circ}C$ for 2 hours in air. After the powders were calcined. the mean size of powder was about 500 nm and the amount of spinel phase was increased over about 65%. The maximum amount of spinel phase was about 75% in the specimen of X=0.72. The magnetic properties of calcined $Mn_{0.72}Zn_{0.28}Fe_2O_4$ powders were the best among the different among the different compositions.

• 한국분말재료학회지
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• 제22권5호
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• 한국자기학회지
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• 제14권1호
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• pp.18-24
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• 2004

Fe(N $O_3$)$_3$$.$9$H_2O$, Ni(N $O_3$)$_2$.6$H_2O$, Zn(N $O_3$)$_2$$.$6$H_2O$와 같은 질산금속염들을 습식법의 일종인 습식 직접 합성법을 이용하여 Ni-Zn ferrite 분말로 합성하였다. 분말의 화학조성은(N $i_{0.284}$F $e_{0.053}$Z $n_{0.663}$)F $e_2$ $O_4$로 하였으며, 고투자율 재료의 영역에 목표를 두었다. 습식 직접 합성법으로 시편을 제조하기 위하여 측량된 질산금속염들을 반응 용기 내에서 NaOH로 침전시키면서 9$0^{\circ}C$의 합성온도로 8시간 동안 교반.합성하였다. 가소 온도는 $700^{\circ}C$로 하여 2시간 유지시켰고, 소결온도는 11$50^{\circ}C$-12$50^{\circ}C$의 범위에서 각각 2시간 유지시켰다. 또 금속산화물을 출발물질로 하여 동일한 조성을 가지는 분말을 습식볼밀링하여 제조하였으며, 두 가지의 공정으로 합성된 분말의 특성과 소결체의 전자기적 특성을 비교.연구하였다. 동일 조건일 경우, 습식 직접 합성법으로 제조하면 입도분포가 좁고, 고순도이며, 미분말인 페라이트 분말을 얻을 수 있었으며 소결체의 특성 또한 비교적 높은 투자율과 자화 값을 나타내었다.

• 공업화학
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• 제20권6호
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• pp.617-621
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• 2009

Zinc oxide (ZnO)을 금(Au)과 fluorine-doped tin oxide (FTO) 촉매로 산화실리콘($SiO_2$) 기판에 산화아연입자 20 nm, $20{\mu}m$를 각각 사용하여 기체-액체-고체(VLS) 합성법으로 성장시켰다. 나노로드의 표면특성, 화학조성, 그리고 결정특성을 엑스레이회절(X-ray diffraction (XRD)), 에너지 분산형 X선 분광기(Energy-dispersive X-ray spectroscopy (EDX)), 표면 방출주사현미경(Field-emission scanning electron microscope (FE-SEM))으로 분석하였다. ZnO의 입자 크기 뿐만 아니라 결정형태가 성장에 크게 영향을 미쳤다. ZnO의 모든 나노구조가 6방정계(六方晶系), 단일결정구조를 가지고 있었다. 최적온도는 $1030^{\circ}C$, 입자크기는 20 nm이다. 그러므로 Au 대신 플루오린 첨가 도핑으로 전기음성도가 증가된 FTO 증착에 의해서 생성된 나노로드는 경제성 있는 대체물질로서의 가치가 있을 것으로 사료된다.