• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.3
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.499-509
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• 1993

Structures of hematite(${\alpha}$-Fe2O3), Ba-ferrite(BaFe12O19) and Zn2Y(Ba2Zn2Fe12O22) were studied by powder X-ray diffraction(XRD) method. Powder XRD patterns of the ferrites were analyzed with the Rietveld method, and the final refined R-factors were RWP<0.01 and RI<0.03. The lattice parameters refined with hexagonal crystal system were a=5.0342${\AA}$, c=13.746${\AA}$ for hematite, a=5.8928${\AA}$, c=23.201${\AA}$ for Ba-ferrite, and a=5.8763${\AA}$, c=43.567${\AA}$ for Zn2Y. In the hematite, the oxygen parameter is 0.3072 and the Fe-O distances in FeO6octahedron are 1.941${\AA}$ and 2.118${\AA}$, close to the single crystal data of Blake et al.. In the Ba-ferrite, the Fe atom in oxygen trigonal bipyramid is displaced 0.155${\AA}$ away from the BaO3 mirror plane into 4e position. In the Zn2Y, 75% of Zn is located at the oxygen terahedral site in S-block.

• Journal of the Korean Ceramic Society
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• v.16 no.2
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• pp.89-98
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• 1979

In order to prepare ferroxplana ZnY $(Ba_2Zn_2Fe_{12}O_{22})$, which would be useful for GHz-band communication, the optimum coprecipitation condition of 1 $BaCl_{2-1} Zn(NO_3)_2-6FeCl_3$ in $NaOH-Na_2CO_3$ solution was investigated by use of a new apparatus invented in our laboratory. By freeze-drying and calcining the coprecitated hydroxide-carbonate, the very reactive powder was obtained, from which the synthesis process of ZnY and the other related crystals were investigated by means of X-ray diffraction. In results, it was found that the reactive powder containing ZnY as the major component can be prepared by this method, which may be used in manufacturing the various magnetic cores for the microwave communication.

• Journal of Powder Materials
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• v.9 no.6
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• pp.449-454
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• 2002

$MnxZn_{1-x}Fe_2O_4$ (x=0.69~0.74) powders synthesized by the thermal decomposition of organic acid salts. The obtained powders were uniform in composition and ultra-fine particle with about 400 nm. The amount of spinel phase of these powders was about 50% in X-ray diffraction patterns. The calcination of powder was carried out at $900^{\circ}C$ for 2 hours in air. After the powders were calcined. the mean size of powder was about 500 nm and the amount of spinel phase was increased over about 65%. The maximum amount of spinel phase was about 75% in the specimen of X=0.72. The magnetic properties of calcined $Mn_{0.72}Zn_{0.28}Fe_2O_4$ powders were the best among the different among the different compositions.

• Journal of Powder Materials
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• v.22 no.5
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.18-24
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• 2004

Ni-Zn ferrite powder was synthesized from metal nitrates, Fe(N $O_3$)$_3$$.$9 $H_2$O, Ni(N $O_3$)$_2$$.$6 $H_2$O, Zn(N $O_3$)$_2$$.$6 $H_2$O by wet direct process to make high permeability material. The composition of the ferrite powder is (N $i_{0.284}$F $e_{0.053}$Z $n_{0.663}$)F $e_2$ $O_4$. Ni-Zn ferrite powder is compounded by precipitating metal nitrates with NaOH in vessel at 90$^{\circ}C$ synthetic temperature for 8 hours. Calcination temperature and sintering temperature were 700$^{\circ}C$ and 1150$^{\circ}C$-1250$^{\circ}C$ respectively for 2 hours. The same compound powder was extracted from metal oxide by wet ballmilling. We compared the properties of powder and the electromagnetic characteristics of the sintered cores obtained from the two different processes. Wet direct process produces smaller particle size with narrower distribution and higher purified ferrite which cores has high permeability and high magnetization.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.