• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.734-739
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• 2005

Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.652-656
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• 2003

The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

• Journal of Powder Materials
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• v.22 no.5
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.609-616
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• 2017

We investigated a Leidenfrost effect in the growth of ZnO nanostructures on silicon substrates by ultrasonic-assisted spray pyrolysis deposition(SPD). Structural and optical properties of the ZnO nanostructures grown by varying the growth parameters, such as substrate temperature, source concentration, and suction rate of the mist in the chambers, were investigated using field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. Structural investigations of the ZnO nanostructures showed abnormal evolution of the morphologies with variation of the substrate temperatures. The shape of the ZnO nanostructures transformed from nanoplate, nanorod, nanopencil, and nanoprism shapes with increasing of the substrate temperature from 250 to $450^{\circ}C$; these shapes were significantly different from those seen for the conventional growth mechanisms in SPD. The observed growth behavior showed that a Leidenfrost effect dominantly affected the growth mechanism of the ZnO nanostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.362-365
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• 2015

Silica encapsulated ZnSe quantum dots (QDs) were prepared by employing two microemulsion systems: AOT/water/cyclohexane microemulsions containing ZnSe quantum dots with NP5/water/cyclohexane microemulsions containing tetraethylorthosilicate (TEOS). Using this method, cubic zinc blende nanoparticles (3 nm in diameter) were synthesized and encapsulated by silica nanoparticles (20 nm in diameter). The temperature dependence of photoluminescence (PL) for silica-encapsulated ZnSe QDs was investigated to evaluate this material as a temperature sensor media. The fluorescence emission intensity of silica-encapsulated ZnSe nanoparticles (NPs) was decreased with an increase of ambient temperature over the range from $30^{\circ}C$ to $60^{\circ}C$ and a linear relationship between the temperature and the emission intensity was observed. In addition, the temperature dependence of PL intensity for silica-encapsulated ZnSe NPs showed a reversible pattern on ambient temperature. A reversible temperature dependence of the luminescence combined with its insensitivity toward quenching by oxygen due to silica coating established this material as an attractive media for temperature sensor applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1022-1025
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• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.9-10
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• 2008

Triple layers structure of $SiO_2$/ZnS:Mn/ZnS was synthesized by using ion substitution and chemical precipitation method. Each layer thickness was controlled by adjusting the concentration of manganese (II) acetate ($Mn(CH_3COO)_2$) and tetraethyl orthosilicate (TEOS). The structure and morphology of prepared phosphors were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microscopic analyzer (EPMA). Photoluminescence (PL) properties of ZnS with different layer thickness and amount of Mn activator were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of Mn activator.