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http://dx.doi.org/10.4313/JKEM.2005.18.8.734

Effect of Ambient Gases on Thermal Annealed ZnO films deposited on Si(111) Substrates  

Lee, Ju-Young (한국해양대학교)
Kim, Hong-Seung (한국해양대학교)
Jung, Eun-soo (한국해양대학교)
Jang, Nak-Won (한국해양대학교 전기전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.8, 2005 , pp. 734-739 More about this Journal
Abstract
Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.
Keywords
ZnO; Thermal annealing; AES; XRD; PL;
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