• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.669-674
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• 2002

Ni-Zn ferrite was sintered by microwave hybrid sintering method using microwave energy of 2.45 GHz, 700 W in the temperature range of 900$^{\circ}C$ ∼ 1070$^{\circ}C$. A high density (98%TD) Ni-Zn ferrite, added Bi$_2$O$_3$ and CuO, with a single phase was obtained by microwave sintering at 970$^{\circ}C$ for 15 min. All the sintered samples showed sintered density over 90% of TD. These results indicate that the processing time and energy consumption can be reduced significantly by microwave hybrid sintering method.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.41-46
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• 2015

In this work, pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped hierarchical ZnO structure was synthesized uniformly through photochemical route. The reduced graphene oxide (rGO) has been synthesized by typical Hummer's method and reduced by hydrazine. Prepared Ag/ZnO nanostructures are uniformly dispersed on the surface of rGO sheets using ultrasonication process. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. The average size of prepared ZnO microspheres was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of doped-Ag nanoparticles was 50 nm and decorated into ZnO/rGO network. The $C_2H_2$ gas sensing properties of as-prepared products were investigated using resistivity-type gas sensor. Ag/ZnO-rGO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the Ag/ZnO. The $C_2H_2$ sensor based on Ag/ZnO-rGO had linear response property from 3~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 22% and 78% for Ag/ZnO and Ag/ZnO-rGO, respectively. In additions, the sensor still shows high sensitivity and quick response/recovery to $C_2H_2$ under high relative humidity conditions. Moreover, the device shows excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.127-127
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• 2005

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.238-243
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• 2022

In this study, a pyrene-core single molecule with amino (-NH₂) functional group material was hybridized using ZnO quantum dots (QDs). The suppressed performance of the 1-aminopyrene (1-PyNH₂) single molecule as an emissive layer (EML) in light-emitting diodes (LEDs) was exploited by adopting the ZnO@1-PyNH₂ core-shell structure. Unlike pristine 1-PyNH₂ molecules, the ZnO@1-PyNH₂ hybrid QDs formed energy proximity levels that enabled charge transfer. This result can be interpreted as an improvement in surface roughness. The uniform and homogeneous EML alleviates dark-spot degradation. Moreover, LEDs with the ITO/PEDOT:PSS/TFB/EML/TPBi/LiF/Al configuration were fabricated to evaluate the performance of two emissive materials, where pristine-1-PyNH₂ molecules and ZnO@1-PyNH₂ QDs were used as the EML materials to verify the improvement in electrical characteristics. The ZnO@1-PyNH₂ LEDs exhibited blue luminescence at 443 nm (FWHM = 49 nm), with a turn-on voltage of 4 V, maximum luminance of 1500 cd/m², maximum luminous efficiency of 0.66 cd/A, and power efficiency of 0.41 lm/W.

• Journal of Microbiology and Biotechnology
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• v.28 no.6
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• pp.957-967
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• 2018

A novel $g-C_3N_4$/ZnO/stellerite (CNZOS) hybrid photocatalyst, which was synthesized by coupled hydro thermal-thermal polymerization processing, was applied as an efficient visible-light-driven photocatalyst against Staphylococcus aureus. The optimum synthesized hybrid photocatalyst showed a sandwich structure morphology with layered $g-C_3N_4$ (doping amount: 40 wt%) deposited onto micron-sized ZnO/stellerite particles (ZnO average diameter: ~18 nm). It had a narrowing band gap (2.48 eV) and enlarged specific surface area ($23.05m^2/g$). The semiconductor heterojunction effect from ZnO to $g-C_3N_4$ leads to intensive absorption of the visible region and rapid separation of the photogenerated electron-hole pairs. In this study, CNZOS showed better photocatalytic disinfection efficiency than $g-C_3N_4/ZnO$ powders. The disinfection mechanism was systematically investigated by scavenger-quenching methods, indicating the important role of $H_2O_2$ in both systems. Furthermore, $h^+$ was demonstrated as another important radical in oxidative inactivation of the CNZOS system. In respect of the great disinfection efficiency and practicability, the CNZOS heterojunction photocatalyst may offer many disinfection applications.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.6
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• pp.541-548
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• 2015

We study the structural and functional characteristics of zinc oxide (ZnO) nanostructures that are grown on carbon nanotube (CNT) constructs via step-wise chemical vapor deposition (CVD). First, we optimize the CVD process to directly grow ZnO nanostructures on CNTs by controlling the growth temperature below $600^{\circ}C$, where CNTs can be sustained in a ZnO-growing oxidative atmosphere. We then investigate how the morphology and areal density of ZnO nanostructures evolve depending on process parameters, such as pressure, temperature, and gas feeding composition, while focusing on the effect of underlying CNT topology on ZnO nucleation and growth. Because various types of ZnO nanostructures, including nanowires, nanorods, nanoplates, and polycrystalline nanocrystals, can be conformally formed on highly conductive CNT platforms, this electrically addressable three-dimensional hybrid nanoarchitecture may better meet a wide range of nanoelectronic application-specific needs.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.139.2-139.2
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.420-420
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• 2007

ZnO 나노막대는 산화물 반도체로서 넓은 밴드캡 (3.37eV)을 가진 반도체이며, 테라급의 전계 효과 트랜지스터(FET), 대기오염물질 모니터링 센서, 태앙전지용 전극, UV 발광소자, 전계방출 디스플레이의 팀 등 나노기술 전반에 활용해 최근 각광을 받고 있는 물질이다. 최근 디바이스 응용의 효율을 높이기 위한 방편으로 나노막대에서 박막으로의 연구가 활발하다. 본 실험은 MOCVD률 이용하여 p-si 기판위에 나노막대를 성장시킨 후 압력 및 온도 등의 공정변수를 조절하여 나노막대에서 박막으로 성장형태를 변화시켰다. SEM으로 1 차원 나노막대에서 2차원의 나노박막으로 성장이 된 ZnO 하이브리드 구조를 확인할 수 있었다. 또, PL장비를 이용해 ZnO의 UV영역의 파장을 확인할 수 있었다.