• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국세라믹학회지
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• 제47권4호
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.1024-1029
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• 2022

Composite scintillation screens on a base of Gd_1.2Y_1.8Ga_2.5Al_2.5O₁₂:Ce (GYAGG) scintillator have been evaluated for neutron detection. Besides the powdered scintillator, the composite includes ⁶LiF particles; both are merged with a binder and deposited onto the light-reflecting aluminum substrate. Results obtained demonstrates that screens are suitable for use with a silicon photomultiplier readout to create a prospective solution for a compact and low-cost thermal neutron sensor. Composite GYAGG/⁶LiF scintillation screen shows a pretty matched sensitivity and γ-background rejection with a widely used ZnS/⁶LiF screens however, possesses forty times faster response.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국정보통신학회논문지
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• 제18권10호
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• pp.2497-2502
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• 2014

본 연구에서는 고주파 마그네트론 스퍼터링 법으로 RF 파워 (50~80 W) 를 변화시켜가며 PES 플라스틱 기판 위에 GZO ($Ga_2O_3$ : 5 wt %, ZnO : 95 wt %) 박막을 제작하여, 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 공정 조건에 관계없이 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 70W에서 제작한 GZO 박막이 반가폭 $0.44^{\circ}$로 가장 우수한 결정성을 나타내었다. 박막의 표면을 AFM 으로 조사한 결과, 표면 거칠기 값은 RF 파워 70 W 에서 제작한 박막에서 가장 낮은 값인 0.20 nm 를 나타내었다. Hall 측정 결과, RF 파워 70 W에서 제작한 GZO 박막에서 가장 낮은 비저항 $6.93{\times}10^{-4}{\Omega}{\cdot}cm$ 값과 가장 높은 캐리어 농도 $7.04{\times}10^{20}cm^{-3}$ 및 이동도 $12.70cm^2/Vs$ 값을 나타내었다. 모든 GZO 박막은 RF 파워에 무관하게 가시광 영역에서 약 80 % 정도의 투과율을 나타냈으며, 캐리어 농도의 증가에 따라 에너지 밴드갭이 청색 편이 되는 Burstein-Moss 효과도 관찰할 수 있었다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.59-62
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• 2019

본 논문은 용액공정용 불소 도핑된 인듈 갈륨 징크 산화물 반도체를 연구하였으며, 박막 트랜지스터 적용 가능성을 확인하였다. 용액형 산화물 반도체를 형성하기 위해, 금속염 전구체 기반 용액을 제조하였으며, 추가적인 불소 도핑을 유도하기 위해 화학적 첨가제로서 암모늄 플로라이드를 이용하였다. 열처리 온도 및 불소 도핑양에 따른 전기적 물성을 고찰함으로서, 300도 저온 열처리를 통해 제조된 산화물 반도체층의 전기적 특성을 향상시켰다. 20 mol% 불소를 도핑하는 경우, $1.2cm^2/V{\cdot}sec$의 이동도 및 $7{\times}10^6$의 점멸비 특성이 발현 가능함을 확인하였다.

• 한국방사선학회논문지
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• 제17권3호
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• pp.359-365
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• 2023

높은 초당 프레임 속도와 낮은 영상지연을 갖는 동영상 엑스레이 디텍터의 요구조건을 만족하기 위해서는 픽셀내 포토다이오드와 금속 배선간 중첩 영역의 기생정전용량을 최소화하여야 한다. 본 연구에서는 리드아웃 박막트랜지스터, 리셋 박막트랜지스터, 그리고 포토다이오드로 픽셀이 구성된 듀오픽스^TM(duoPIX^TM) 동영상 엑스레이 영상센서를 처음으로 제시하였다. 이후 150 × 150 mm² 영상영역, 73 ㎛ 픽셀 크기, 2048 × 2048 해상도(4.2 M pixels), 최대 초당 50 프레임의 특성을 갖는 duoPIX^TM 동영상 엑스레이 디텍터를 제작하여 초당 프레임 속도, 감도, 노이즈, MTF, 영상지연과 같은 엑스레이 영상 성능을 기존 엑스레이 영상센서를 적용한 동영상 엑스레이 디텍터와 비교 평가하였다. 평가 결과 이전 연구에서 기대했던 것과 같이 duoPIX^TM 동영상 엑스레이 디텍터가 기존 동영상 엑스레이 디텍터 대비 모든 특성에서 우위의 성능을 보여 주었다.