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http://dx.doi.org/10.4191/KCERS.2010.47.4.329

The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO  

Bae, Sung-Hwan (Department of Materials Science and Engineering, Seoul National University)
Yoo, Il-Hwan (Department of Materials Science and Engineering, Seoul National University)
Kang, Suk-Ill (Department of Physics, Chounbuk National University)
Park, Chan (Department of Materials Science and Engineering, Seoul National University)
Publication Information
Journal of the Korean Ceramic Society / v.47, no.4, 2010 , pp. 329-332 More about this Journal
Abstract
In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.
Keywords
Amorphous oxide semiconductor; Thin film transistor; IGZO; Absorption tail;
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