• Title/Summary/Keyword: ZnO Heat Treatment

Search Result 152, Processing Time 0.028 seconds

Effect of Heat Treatment Method on Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

  • Kim, Deok Kyu
    • Applied Science and Convergence Technology
    • /
    • v.26 no.2
    • /
    • pp.30-33
    • /
    • 2017
  • ZnO thin films which were deposited by RF magnetron sputtering system were annealed by furnace and insitu heat treatment methods. We investigated the effect of heat treatment method on physical properties of ZnO thin films. The structural and optical properties of ZnO thin films were improved by heat treatment. Through the annealing treatment of ZnO film by furnace, the good crystallinity and ultraviolet emission were obtained. These results are attributed to the improved formation of Zn-O bond in ZnO thin film annealed at by furnace. We confirm that the formation of Zn-O bond plays an important role in obtaining the excellent structural and optical properties of ZnO thin films.

Effect of Heat Treatment on the Nonlinear Exponents in ZnO Varistors (열처리에 따른 ZnO 바리스터의 비직선 계수의 영향)

  • 안충선;심영재;조병두
    • Journal of the Korean Ceramic Society
    • /
    • v.29 no.2
    • /
    • pp.161-165
    • /
    • 1992
  • Nonlinear exponents and electron trap density variations were observered in ZnO-Bi2O3-MnO2 ternary ZnO varistors as a function of heat treatment temperature. Three kinds of ZnO varistor compositions were selected; i.e. 99.0 ZnO-0.5 Bi2O3-0.5 MnO2, 98.5 ZnO-1.0 Bi2O3-0.5 MnO2, and 98.0 ZnO-1.5 Bi2O3-0.5 MnO2 in mol%. Sintering was done at 1150$^{\circ}C$ for three hours, and heat treatments were done at 500$^{\circ}C$, 700$^{\circ}C$, and 900$^{\circ}C$. When heat treated at 500$^{\circ}C$, nonlinear exponents were increased regardless of the Bi2O3 amount. Increasing heat treatment temperature above 500$^{\circ}C$ resulted in lowering nonlinear exponents. Nonlinear exponents seem to be related to the 0.17 and 0.33 eV electron traps which are possibly of intrinsic origin.

  • PDF

Electrical and Optical Properties of Heat Treated ZnO:Al Transparent Conductive Films (열처리된 ZnO:Al 투명도전막의 전기적 및 광학적 특성)

  • You, Gyeon-Gue;Kim, Jeong-Gyoo;Park, Ki-Cheol
    • Journal of Sensor Science and Technology
    • /
    • v.8 no.2
    • /
    • pp.189-194
    • /
    • 1999
  • The heat treatment effects of the undoped ZnO and Al doped ZnO(AZO) transparent conductive films prepared by rf magnetron sputtering were investigated. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied. The resistivity of the un doped ZnO films heat treated in air and $H_z$ plasma for 1 hour increased rapidly above $200^{\circ}C$ and $300^{\circ}C$, respectively. And that of the ZnO:Al films heat treated in air also increased rapidly above $300^{\circ}C$. On the other hand that of the ZnO:Al films heat treated in $H_z$ plasma was constant regardless of heat treatment temperature. The optical transmittance above 550nm is about 90% for all thin films regardless of impurity doping, the heat treatment temperature and ambient.

  • PDF

Effect of Depositon Variables and Heat-treatment on the Growth Charateristics and Electrical Resistivity of ZnO Thin Film by Sputtering (증착변수 및 열처리 효과가 스퍼터링된 ZnO 박막의 성장 특성 및 전기비저항에 미치는 영향)

  • 하재수;김광호
    • Journal of the Korean Ceramic Society
    • /
    • v.35 no.7
    • /
    • pp.733-739
    • /
    • 1998
  • C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

  • PDF

In Situ Heat Treatment of ZnO:Al Thin Films Fabricated by RF Magnetron Sputtering

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.5
    • /
    • pp.307-311
    • /
    • 2017
  • ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

Annealing Effects on the Properties of Bi-doped ZnO Thin Film (Bi-doped ZnO 박막의 열처리에 따른 특성)

  • Shin, Johngeon;Hwang, Injoo;Cho, Shinho
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.33 no.1
    • /
    • pp.13-19
    • /
    • 2020
  • Annealing effects on the properties of Bi-doped ZnO thin films were investigated. Bi- doped ZnO thin films were deposited on quartzs substrates at 300℃ by using radio-frequency magnetron sputtering system. Post heat treatments at 600, 700, and 800℃ were performed to evaluate the effect of annealing temperatures on the structural, optical, and electrical properties of Bi-doped ZnO thin films. FE-SEM images showed the dramatic surface morphology changes by rearrangement of elements at high heat treatment temperature of 800℃. X-ray diffraction analysis indicated that the peaks of the Bi-doped ZnO thin films were same as the peaks of the (002) planes of ZnO peak-positioned at 2θ=34.0° and peak intensities and FWHMs were improved as the annealing temperatures increased. The optical transmittance was improved with increasing annealing temperatures and was over 80% in the wavelength region between 435 and 1100 nm at the annealing temperature of 700 and 800℃. With increasing annealing temperature, the electron concentrations and electron mobilities were increased. On the other hand, electric resistivity of the films were decreased with increasing annealing temperatures. These results showed that the heat treatment temperature is an important parameter to improve the structural, optical, and electrical properties of Bi-doped ZnO thin films.

Effects of Post Annealing on the Properties of ZnO:Al Films Deposited by RF-Sputtering (RF-Sputtering 법을 이용한 ZnO:Al 박막의 후 열처리에 따른 특성 변화)

  • Lee, Jae-Hyeong;Lee, Dong-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.9
    • /
    • pp.789-794
    • /
    • 2008
  • Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

Electrical and Optical properties of ZnO:Al films with Heat treatment (열처리 조건에 따른 ZnO:Al 박막의 전기적 광학적 특성)

  • Lee, Dong-Jin;Lee, Jae-Hyeong;Sun, Ho-Jung;Lee, Jong-In;Jong, Dong-Su;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.133-134
    • /
    • 2007
  • We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.

  • PDF

CO Sensor Characteristics of ZnO powders by Sol-Gel methods (Sol-Gel법에 의한 ZnO 분말의 CO 센서 특성)

  • Park, Bo-Seok;Park, Jin-Seoung;Noh, Whyo-Sub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.821-825
    • /
    • 2002
  • ZnO thick films by Sol-Gel processing were investigated electrics, optics and the sensing characteristics of CO gas. Using the znic acetate dihydrate and acetylaceton (AcAc) as a chelating agent, stable ZnO sol was synthesized. ZnO phase was crystallized through the heat-treatment at $70^{\circ}C$ for 4hrs and influenced the sensing characteristics of the electrics and CO gas by uniform particle distributions not related particle size. The samples on the alumina substrate by thick films were investigated the properties of electrics and the effect of sensing. The sensitivity was so excellent in the sample of the heat-treatment at $600^{\circ}C$ for 12hrs and good in the heat-treatment for 1hrs generally. Crystallization and volatilization of organic materials according to the change of heating treatment temperature of thick films were analyzed by TG-DTA, XRD and mirostructure of thick films were observed by SEM.

  • PDF

Effect of Rapid Thermal Annealing on the Transparent Conduction and Heater Property of ZnO/Cu/ZnO Thin Films (RTA 후속 열처리에 따른 ZnO/Cu/ZnO 박막의 투명전극 및 발열체 특성 연구)

  • Yeon-Hak Lee;Daeil Kim
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.36 no.3
    • /
    • pp.115-120
    • /
    • 2023
  • ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10-3 Ωcm to 1.18 × 10-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.