Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Post Annealing on the Properties of ZnO:Al Films Deposited by RF-Sputtering

RF-Sputtering 법을 이용한 ZnO:Al 박막의 후 열처리에 따른 특성 변화

  • 이재형 (군산대학교 전자정보공학부) ;
  • 이동진 (군산대학교 전자정보공학부)
  • Published : 2008.09.01
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Abstract

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

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References

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