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http://dx.doi.org/10.4313/JKEM.2008.21.9.789

Effects of Post Annealing on the Properties of ZnO:Al Films Deposited by RF-Sputtering  

Lee, Jae-Hyeong (군산대학교 전자정보공학부)
Lee, Dong-Jin (군산대학교 전자정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.9, 2008 , pp. 789-794 More about this Journal
Abstract
Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.
Keywords
TCO(Transparent conducting oxide); ZnO:Al; RF sputtering; Heat treatment;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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