• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.1-5
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• 2008

This study has been investigated the deformation behavior of a hot-extruded Mg-Zn-RE (RE: rare earth elements) alloy containing $Mg_{12}$(RE) particles at the elevated temperatures. The particles are intrinsically produced by breaking the eutectic structure of the alloy during the hot-extrusion process. The grain size of the extruded Mg-Zn-RE alloy developed via dynamic recrystallization is around $10{\mu}m$. Under the heat treatment at 200o C up to 48 hr, no change has been observed on the microstructure and mechanical properties due to the pinning effect of the thermally stable particles. Under the tensile test condition in the initial strain-rate range of $1\times10^{-3}s^{-1}$ and the temperature range up to $200^{\circ}C$, the alloy shows yield strength of 270 MPa and elongation to failure around 9% at room temperature and yield strength of 135 MPa at $200^{\circ}C$. Furthermore, although the alloy contains large amount of the second phase particles around 15%, it shows excellent hot-workability possibly due to the presence of the thermally stable interface between the particles and the matrix.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.333-339
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• 2003

Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BCN) has a 1:2 ordered hexagonal structure. Q-value of BCN increased with increasing sintering temperature however, it significantly decreased when the sintering temperature exceeded 140$0^{\circ}C$ Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BZN) has the 1:2 ordered hexagonal structure and the degree of the 1 : 2 ordering decreased with the increase of the sintering temperature. The Q value of the BZN increased with increasing the sintering temperature and BZN sintered at 140$0^{\circ}C$ for 6h has a maximum Q-value. For (1-x) Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$-zBa(Zn$_{1}$ 3/Nb$_{2}$ 3/)O$_3$[(1-x)BCN-xBZN] ceramics the 1:2 ordered hexagonal structure was observed in the specimens with x$\leq$0.3 and the BaNb$_{6}$ O$^{16}$ second phase was found in the specimens with x$\geq$0.6. Grain Growth, which is rotated to the BaNb$_{6}$ O$^{16}$ second phase occurred in the specimens with x$\geq$ 0.5. In this work, the excellent microwave dielectric properties of $\tau$r=0.0 ppm/$^{\circ}C$$\varepsilon$r=34.5 and Q,$\times$f=97000GHz sere obtained for the 0.7BCV-0.3BZN ceramics sintered at 1400$0^{\circ}C$ for 20h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.281-285
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• 1998

The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

• Journal of Environmental Health Sciences
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• v.17 no.1
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• pp.39-49
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• 1991

고온에서 황화수소(H$_{2}$S)를 제거하기 위한 흡착제를 개발할 목적으로 ZnO에 $Fe_{2}O_{3}$를 5~50 atomic %까지 첨가시켜 제조한 다공성 흡착제와 황화수소와의 반응(sulfidation)을 thermogravimetric analyzer (Shimadzu DT-30)로 수행하였으며, 고정층세서 zinc ferrite 흡착제의 흡착능을 측정하였다. 반응온도는723$^{\circ}$K~973$^{\circ}$K범위이며, 반응기체는 황화수소(2vol.%)와 질소와 혼합기체로서 total gas flow rate는 200ml/min으로 고정시켰다. Grain Model을 사용하여 실험데이터를 분석한 결과 전화율이 낮을 때 zinc ferrite와 황화수소 반응의 율속단계는 화학반응이었고 황화수소 농도에 대해 1차 반응이었다. 실험한 흡착제 중 10 atomic %의 $Fe_{2}O_{3}$를 첨가하여 제조한 zinc ferrite형 흡착제가 반응속도, 흡착능, 그리고 재생성면에서 우수한 흡착제로 밝혀졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.80-83
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• 1999

We have studied properties(crystal structure, density, absorption, contraction, initial permeability, and permeability) of Ni$_{0.175-x}$Cu$_{x}$Zn$_{0.33}$Fe$_{0.495}$ (x=0~0.175) ferrites with various NiO and CuO, because of development of materials for high frequency inductor. The XRD peaks of all of samples were observed only spine이 phase. As a results of the density, absorption rate, and shrinkage rate, the grain growth progressed rapidly in x=0.1 at 95$0^{\circ}C$, x=0.075 at 105$0^{\circ}C$, and x=0.025 at 115$0^{\circ}C$ for 3 hours. Initial permeability increased with increasing CuO concentration until x=0.1, and then decreased. The complex permeability as a function frequency were high values at sintered 105$0^{\circ}C$ fotr3 hours in x=0.075, 0.1., 0.1.1.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.