Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Microstructure and Conduction Characteristics of Bismuth-Based Zinc Oxide Varistors with $Y_2O_3$Additive

$Y_2O_3$가 첨가된 비스무스계 산화아연 바리스터의 미세구조 및 전도특성

  • 박춘현 (동의대학교 전기공학과) ;
  • 남춘우 (동의대학교 전기공학과)
  • Published : 1998.11.01
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Abstract

The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

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