• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.860-863
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• 2007

ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.817-820
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• 2012

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1404-1405
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• 2006

Transparent ZnO thin films were deposited on quartz substrates by a KrF pulsed laser deposition (PLD) technique with different process conditions such as substrate temperature ($T_s$) and oxygen ambient pressure ($pO_2$). Surface morphology, crystal structure, and electrical properties of the ZnO films were investigated in order to characterize their thin film properties. The pulsed laser deposited ZnO films showed highly c-oriented crystalline structures depending on the process conditions: the highest FWHM (Full Width Half Maximum) value of (002) peak was observed for the ZnO film prepared at $T_{s}=550^{\circ}C$, $pO_2$=5mTorr and laser fluence of $2J/cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.380-380
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• 2011

ZnO 나노라드 위에 양자점을 증착한 후 그 위에 $TiO_2$를 ALD방법으로 증착하여 그 passivation 효과가 solar cell 효율에 미친 영향에 대한 실험을 진행하였다. Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 성장시킨다. 여기에 SILAR 방법을 거쳐서 CdS 양자점을 증착시키고, 후에 CBD를 이용하여 CdSe 양자점을 증착시킨다. 여기에 마지막으로 amorphous $TiO_2$로 표면을 덮는 과정을 거치는데, $TiO_2$가 ZnO 라드 위에 균일하고 정밀하게 증착되도록 하기 위해서 Atomic Layer Deposition을 이용하였다. 다양한 분석 방법을 통해 $TiO_2$/CdSe/CdS/ZnO 구조를 조사하였으며, ZnO 나노라드 위에 $TiO_2$가 정교하게 올라간 것을 확인한 후에 solar cell에 적용하여 그 효율을 확인하였다.

• Journal of the Korean Society for Heat Treatment
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• v.6 no.2
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• pp.89-97
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• 1993

An improvement in corrosion resistance of various types of Zn-coated steel sheets is thought to be possible with the addition of fine oxide powder to the coating. In this study the corrosion resistance of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheet has been investigated and the results were as follows : The corrosion resistance of $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets was improved by increasing the contents of Co and Cr ions, and also $Al_2O_3$ powders in the bath because of the increased amount of Co, Cr and $Al_2O_3$ in deposits. In the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steels sheet, the structure of deposits was changed from fine microstructure as observed in high Co containing deposits to coarse microstructure as in high Cr and $Al_2O_3$ containing deposits. By cold rolling of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets to about 2 percent, thr corrosion resistance was improved further.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.51-58
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• 1998

ZnS and TB-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (AKE) and characterized using materials and surface analysis techniques. $ZnCl_2$, $H_2$S,and tris(2,26,6-tetramethyl-3,5-heptandionato) terbium ($Tb(TMHD)_3$) were used as the precursors in the growth of ZnS:Tb films. The dependence of Cl content in ZnS films on growth temperature was investigated using Rutherford backscattering spectrometry. The Cl content decreased from approximately 9 at.% to 1 at. % as increasing the growth temperature from 400 to $500^{\circ}C$. The segregation of Cl in near surface region was also observed by depth profiling using Auger electron spectroscopy. Scanning electron microscopic studies showed that the ALE-grown ZnS and ZnS:Tb film during ALE process using $Tb(TMHD)_3$was also investigated. Approximately 1 at.% of O in ZnS:Tb(0.5 at.%) film which showed a good crystallinity of hexagonal 2H structure.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.486-490
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• 2011

Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.632-639
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• 1994

For dye sensitization of zinc oxide in the visible region, copper phthalocyanine(CuPc) and sunfast yellow(SY) were adsorbed in two layers on zinc oxide powder. The adsorption structures of $\alpha-and\beta-CuPc$ on zinc oxide were investigated by photoacoustic, IR and Raman spectra. The ${\alpha}-and\;{\beta}$-polymorphs exhibited dimeric structure or molecular aggregates. The surface photovoltaic effect of ZnO/CuPc/SY showed higher than that of ZnO/SY/CuPc and $ZnO/\beta-CuPc/SY$ indicated better photosensitive than $ZnO/\alpha-CuPc/SY.$ Electrophotographic sensitivity of $ZnO/\beta-CuPc/SY$ was $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ at 630 nm.