Browse > Article
http://dx.doi.org/10.5370/KIEE.2012.61.6.817

P-type Capacitance Observed in Nitrogen-doped ZnO  

Yoo, Hyun-Geun (아주대 정보통신대 전자공학과)
Kim, Se-Dong (아주대 정보통신대 전자공학과)
Lee, Dong-Hoon (아주대 정보통신대 전자공학과)
Kim, Jung-Hwan (아주대 정보통신대 전자공학과)
Jo, Jung-Yol (아주대 정보통신대 전자공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.61, no.6, 2012 , pp. 817-820 More about this Journal
Abstract
We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.
Keywords
ZnO; MOCVD; CV characteristics; TFT; Nitrogen; Display;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K. Miyamoto, M. Sano, H. Kato, and T. Yao, "Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane Sapphire," Jpn J. Appl. Phys. vol. 41, pp. L1203-L1205, 2002.   DOI   ScienceOn
2 A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. Chichibu, and M. Kawasaki, "Blue Light-Emitting Diode Based on ZnO," Jpn J. Appl. Phys. vol. 44, L643-L645, 2005.   DOI   ScienceOn
3 H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, "High Mobility Transparent Thin-Film Transistors with Amorphous Zinc Tin Oxide Channel Layer," Appl. Phys. Lett. vol. 86, p. 13503, 2005.   DOI   ScienceOn
4 K. Nomura, H. Ohta, A.Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors," Nature vol. 432, pp. 488-492, 2004.   DOI   ScienceOn
5 J. Jo, O. Seo, E. Jeong, H. Seo, E. Jeong, H. Seo, B. Lee, and Y. I. Choi, "Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition," Jpn J. Appl. Phys. vol. 46, 2493-2495, 2007.   DOI
6 J. Jo, O. Seo, H. Choi, and B. Lee, "Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition," Appl. Phys. Express vol. 1, p. 041202, 2008.   DOI
7 S. B. Zhang, S. H. Wei, and A. Zunger, "Intrinsic n-type versus p-type Doping Asymmetry and the Defect Physics of ZnO," Phys. Rev. B vol. 63, p. 075205, 2001.   DOI   ScienceOn
8 E. C. Lee, Y. S. Kim, Y. G. Jin, and K. J. Chang, "Compensation Mechanism for N Acceptors in ZnO," Phys. Rev. B vol. 64, p. 085120, 2001.   DOI   ScienceOn
9 Y. Ma, G. T. Du, S. R. Yang, Z. T. Li, B. J. Zhao, X. T. Yang, T. P. Yang, Y. T. Zhang, and D. L. Liu, "Control of Conductivity Type in Undoped ZnO Thin Films Grown by Metalorganic Vapor Phase Epitaxy," J. Appl. Phys. vol. 95, pp. 6268-6271, 2004.   DOI   ScienceOn
10 T. V. Butkhuzi, A. V. Bureyev, A. N. Georgobiani, N. P. Kekelidze, and T. G. Khulordava, "Optical and Electrical Properties of Radical Beam Gettering Epitaxy Grown n- and p-type ZnO Single Crystals," J. Cryst. Growth vol. 117, pp. 366-369, 1992.   DOI   ScienceOn
11 A. N. Georgobiani, M. B. Kotlyarevskii, V. V. Kidalov, L. S. Lepnev, and I. V. Rogozin, "Luminescence of Native-Defect p-Type ZnO," Inorg. Mater. vol. 37, pp. 1095-1098, 2001.   DOI   ScienceOn
12 G. Xiong, J. Wilkinson, B. Mischuck, S. Tuzemen, K.B.Ucer, and R.T. Williams, "Control of p- and n-type Conductivity in Sputter Deposition of Undoped ZnO," Appl. Phys. Lett. vol. 80, p. 1195, 2002.   DOI   ScienceOn